Tunnel field-effect transistors exhibiting performance beyond the Boltzmann thermionic limit
The International Roadmap for Devices and Systems (IRDS) has identified the tunnel field-effect transistor (TFET) as the most promising next-generation logic device that enables sustainable downscaling in driving voltage and power consumption. Demonstrating an acceptable sub–Boltzmann-limit ON current (namely I 60 , the current level when a TFET switches to a subthreshold swing level of 60 millivolts per decade) and current-switching ratio has presented a formidable challenge. We report a TFET based on a bismuth/indium selenide (Bi/InSe) heterostructure that exhibits an I 60 of up to ~10 microamperes per micrometer and a current-switching ratio of >10 7 . We attribute such promising TFETs to precise material design, clean interfaces fabricated under vacuum, and band engineering based on subthreshold swing physics. Our results demonstrate a high-performance basic building block that meets the IRDS requirements for next-generation integrated circuits.
Authors
- Ran Ding (ORCID: https://orcid.org/0000-0003-0493-6642)
- Songhua Cai (ORCID: https://orcid.org/0000-0003-3839-2030)
- Yifei Zhao (ORCID: https://orcid.org/0000-0001-6104-2608)
- Jianhua Hao (ORCID: https://orcid.org/0000-0002-6186-5169)
- Ke Yang (ORCID: https://orcid.org/0000-0003-3037-5068)
- Fumei Yang (ORCID: https://orcid.org/0000-0002-3427-3731)
- Lain‐Jong Li (ORCID: https://orcid.org/0000-0002-4059-7783)
- Wanqing Meng (ORCID: https://orcid.org/0000-0003-4622-415X)
- Ming Yang (ORCID: https://orcid.org/0000-0002-0876-1221)
- Yee Sin Ang (ORCID: https://orcid.org/0000-0002-1637-1610)
- Hui Li (ORCID: https://orcid.org/0000-0002-3006-0165)
- Jiannong Wang (ORCID: https://orcid.org/0000-0002-6133-6371)
- Zehan Wu
- Weizhen Wang
- Yudong Peng
- Zongmeng Yang
Institutions
- Hong Kong Polytechnic University (HK)
- Singapore University of Technology and Design (SG)
- National University of Singapore (SG)
- Singapore Institute of Technology (SG)
- Hong Kong University of Science and Technology (HK)
- Peking University (CN)
Publication Details
- Journal
- Science
- Published
- 2026-08-27
- DOI
- https://doi.org/10.1126/science.adx6059
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Research Foundation Singapore
- Hong Kong Polytechnic University