Symmetry-Based Tight-Binding Hamiltonian for Monolayer 1T'-MoS 2 : Spin Textures and Spin-Resolved Transport in Nanoribbons

We develop a four-band tight-binding model for monolayer 1T'-MoS 2 under a perpendicular electric field (PEF), which reproduces the non-parabolic band dispersion, field effects, and spin texture in agreement with first-principles calculations. Using this model, we show that charge carriers in nanoribbons exhibit net spin polarization solely along the s x direction, with the s y and s z components canceled by mirror symmetry σ yz h . The spin conductance of 1T'-MoS 2 nanoribbons is calculated using the non-equilibrium Green's function (NEGF) method combined with the tight-binding model, revealing that the s x -polarized spin conductance induced by the PEF remains robust against impurities when the Fermi level is located within the topological band gap.

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Publication Details

Journal
Nanotechnology
Published
2026-06-29
DOI
https://doi.org/10.1088/1361-6528/ae83c2
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Symmetry-Based Tight-Binding Hamiltonian for Monolayer 1T'-MoS 2 : Spin Textures and Spin-Resolved Transport in Nanoribbons

Ma Zhou
Nanotechnology
2D Materials and Applications
article

Symmetry-Based Tight-Binding Hamiltonian for Monolayer 1T'-MoS 2 : Spin Textures and Spin-Resolved Transport in Nanoribbons

Ma Zhou
article en

Abstract

We develop a four-band tight-binding model for monolayer 1T'-MoS 2 under a perpendicular electric field (PEF), which reproduces the non-parabolic band dispersion, field effects, and spin texture in agreement with first-principles calculations. Using this model, we show that charge carriers in nanoribbons exhibit net spin polarization solely along the s x direction, with the s y and s z components canceled by mirror symmetry σ yz h . The spin conductance of 1T'-MoS 2 nanoribbons is calculated using the non-equilibrium Green's function (NEGF) method combined with the tight-binding model, revealing that the s x -polarized spin conductance induced by the PEF remains robust against impurities when the Fermi level is located within the topological band gap.

Nanotechnology
Nanchang University (CN)
National Natural Science Foundation of China
Openalex Percentile: Top 17%
2D Materials and Applications
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