Entropy‐Enabled Hierarchical Defect Architecture for Dual Enhancement of Thermoelectric and Mechanical Performance in SnTe Alloys

ABSTRACT Designing thermoelectric materials that combine high conversion efficiency with mechanical robustness remains challenging—especially in metavalent‐bonded chalcogenides, where weak bonds yield intrinsically low lattice thermal conductivity yet compromise mechanical integrity. Here we present an entropy‐enabled defect architecture in SnTe‐based alloys that steers hierarchical defect evolution—from 0D substitutional clusters to 1D dislocations and 3D coherent nanoprecipitates—enabling multiscale regulation of phonon transport and strengthening mechanisms. Broadband phonon scattering depresses lattice thermal conductivity to 0.26 W·m −1 ·K −1 at 873 K, while coherent (Cd,Ge)Se nanoprecipitates and dislocation networks establish effective load‐transfer and pinning pathways, elevating the yield strength to 220 MPa, an improvement of ∼100 MPa (≈83%) relative to pristine SnTe (120 MPa), while retaining reasonable plasticity. In parallel, modest band‐structure optimization through compositionally complex alloying within the entropy‐stabilized matrix improves the power factor. Benefiting from these synergies, the optimized composition Sn 0.91 Cd 0.03 Sb 0.09 Te(GeSe) 0.25 delivers a peak figure of merit of 1.7 and device efficiencies of 7.2% (single‐leg) and 5.7% (multi‐leg). This work establishes a generalizable pathway to strong, efficient thermoelectric materials, particularly applicable to metavalent bonding systems.

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Publication Details

Journal
Advanced Materials
Published
2026-06-29
DOI
https://doi.org/10.1002/adma.73653
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Entropy‐Enabled Hierarchical Defect Architecture for Dual Enhancement of Thermoelectric and Mechanical Performance in SnTe Alloys

Yi Yang, Chuansheng Ma, Lipeng Hu, Tianle Xie et al.
Advanced Materials
Advanced Thermoelectric Materials and Devices
article

Entropy‐Enabled Hierarchical Defect Architecture for Dual Enhancement of Thermoelectric and Mechanical Performance in SnTe Alloys

Yi Yang, Chuansheng Ma, Lipeng Hu, Tianle Xie, G H Peng, Yang Geng, Haijun Wu, Fei Li, Yi-Xiang Wang, Kangjin Zhou, W Qu, Stephen J. Pennycook, Chaoliang Zhang, Yang Zhang, Shengwu Guo, Zhihao Zhao, Xiangdong Ding, Tong Song, Yihua Zhang, Jun Sun
article en

Abstract

ABSTRACT Designing thermoelectric materials that combine high conversion efficiency with mechanical robustness remains challenging—especially in metavalent‐bonded chalcogenides, where weak bonds yield intrinsically low lattice thermal conductivity yet compromise mechanical integrity. Here we present an entropy‐enabled defect architecture in SnTe‐based alloys that steers hierarchical defect evolution—from 0D substitutional clusters to 1D dislocations and 3D coherent nanoprecipitates—enabling multiscale regulation of phonon transport and strengthening mechanisms. Broadband phonon scattering depresses lattice thermal conductivity to 0.26 W·m −1 ·K −1 at 873 K, while coherent (Cd,Ge)Se nanoprecipitates and dislocation networks establish effective load‐transfer and pinning pathways, elevating the yield strength to 220 MPa, an improvement of ∼100 MPa (≈83%) relative to pristine SnTe (120 MPa), while retaining reasonable plasticity. In parallel, modest band‐structure optimization through compositionally complex alloying within the entropy‐stabilized matrix improves the power factor. Benefiting from these synergies, the optimized composition Sn 0.91 Cd 0.03 Sb 0.09 Te(GeSe) 0.25 delivers a peak figure of merit of 1.7 and device efficiencies of 7.2% (single‐leg) and 5.7% (multi‐leg). This work establishes a generalizable pathway to strong, efficient thermoelectric materials, particularly applicable to metavalent bonding systems.

Advanced Materials
Shenzhen University (CN), Xi'an Jiaotong University (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 17%
Advanced Thermoelectric Materials and Devices
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