Giant tunable topological Hall effect in La0.7Sr0.3MnO3/SrIrO3 bilayers

The topological Hall effect (THE) arises from a Berry phase imprinted on conduction electron spins as they traverse noncollinear magnetic textures. It constitutes a transport hallmark of chiral magnetism. Very large THE signals are theoretically expected in oxide heterostructures combining 3d or 4d ferromagnets and 5d metals with strong spin–orbit coupling. However, experimental realizations have so far yielded only modest signals whose emergence could not be linked to any chiral magnetic texture. Using ultrathin La₀.₇Sr₀.₃MnO₃/SrIrO₃ bilayers, here we demonstrate a THE that can be switched ON and OFF by the magnetic history, and we establish a direct one-to-one correspondence between the transport anomaly and the emergence—or disappearance—of a chiral magnetic texture at the interface. Further, the associated THE signal is giant, reaching values an order of magnitude larger than observed earlier in analogous systems. Beyond providing a rare, unequivocal evidence for a pure THE, the controllable link between magnetic chirality and the giant Hall signal at oxide interfaces shows a path for engineering reconfigurable conspicuous topological responses, which could impact spintronic sensing and beyond. The topological Hall effect is a key transport signature of chiral magnetism, yet experimental realizations in oxide heterostructures have been limited. Here, the authors use ultrathin La₀.₇Sr₀.₃MnO₃/SrIrO₃ bilayers to demonstrate a switchable, giant topological Hall effect linked to chiral magnetic textures, paving the way for advanced spintronic applications

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Journal
Communications Materials
Published
2026-06-27
DOI
https://doi.org/10.1038/s43246-026-01255-1
Primary Topic
Magnetic and transport properties of perovskites and related materials
Type
article
Field-Weighted Citation Impact
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article

Giant tunable topological Hall effect in La0.7Sr0.3MnO3/SrIrO3 bilayers

J. Tornos, Stephan Rosenkranz, Mariona Cabero, Carmen Munuera et al.
Communications Materials
Magnetic and transport properties of perovskites and related materials
article

Giant tunable topological Hall effect in La0.7Sr0.3MnO3/SrIrO3 bilayers

J. Tornos, Stephan Rosenkranz, Mariona Cabero, Carmen Munuera, S. València, Javier E. Villegas, Andrea Peralta, B. J. Kirby, J. Santamarı́a, Fernando Gallego, S. G. E. te Velthuis, C. León, Z. Sefrioui, Juan J. Riquelme, Rafael Fuster, M Garcia-Hernandez, Timothy R. Charlton, Sandra Lopez, Federico Mompeán
article en

Abstract

The topological Hall effect (THE) arises from a Berry phase imprinted on conduction electron spins as they traverse noncollinear magnetic textures. It constitutes a transport hallmark of chiral magnetism. Very large THE signals are theoretically expected in oxide heterostructures combining 3d or 4d ferromagnets and 5d metals with strong spin–orbit coupling. However, experimental realizations have so far yielded only modest signals whose emergence could not be linked to any chiral magnetic texture. Using ultrathin La₀.₇Sr₀.₃MnO₃/SrIrO₃ bilayers, here we demonstrate a THE that can be switched ON and OFF by the magnetic history, and we establish a direct one-to-one correspondence between the transport anomaly and the emergence—or disappearance—of a chiral magnetic texture at the interface. Further, the associated THE signal is giant, reaching values an order of magnitude larger than observed earlier in analogous systems. Beyond providing a rare, unequivocal evidence for a pure THE, the controllable link between magnetic chirality and the giant Hall signal at oxide interfaces shows a path for engineering reconfigurable conspicuous topological responses, which could impact spintronic sensing and beyond. The topological Hall effect is a key transport signature of chiral magnetism, yet experimental realizations in oxide heterostructures have been limited. Here, the authors use ultrathin La₀.₇Sr₀.₃MnO₃/SrIrO₃ bilayers to demonstrate a switchable, giant topological Hall effect linked to chiral magnetic textures, paving the way for advanced spintronic applications

Communications Materials
Universidad Complutense de Madrid (ES), Argonne National Laboratory (US), Oak Ridge National Laboratory (US), Centre National de la Recherche Scientifique (FR), National Institute of Standards and Technology (US), Université Paris-Saclay (FR), Helmholtz-Zentrum Berlin für Materialien und Energie (DE), Instituto de Ciencia de Materiales de Madrid (ES), Thales (France) (FR), Centro Nacional de Microelectrónica (ES), NIST Center for Neutron Research (US)
U.S. Department of Energy, Comunidad de Madrid, Ministerio de Ciencia, Innovación y Universidades, European Commission, Agence Nationale de la Recherche, Centre National de la Recherche Scientifique, Office of Science, Agencia Estatal de Investigación, Basic Energy Sciences, Oak Ridge National Laboratory
Openalex Percentile: Top 17%
Magnetic and transport properties of perovskites and related materials
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