Ångstrom-Node Scaling:Design of a High-Throughput, High-Resolution Pulsed Atomic Source via Molecular Layer Physisorption and Electrostatic Field Assistance for Scalable Atom Beam Lithography

We present a pulsed atomic source that achieves both high resolution and high throughput by circumventing the traditional temperature-velocity trade-off in atom beam lithography. The core principle is threefold: (i) lowering the desorption barrier via a molecular physisorption layer, (ii) passive thermalisation of hot atoms to room temperature, and (iii) near-field operation that minimises scattering and flight-time dispersion. This combination enables a narrow velocity spread of approximately 20 percent, high repetition rates from 10 to 100 kHz, and native scalability to large emitter arrays with 10^4 to 10^6 tips—offering a path toward wafer-scale atomic lithography with resolution unattainable by conventional effusion sources. The design replaces the "high-temperature brute force" approach with a "low-temperature soft-switch" mechanism, mirroring biological cell membrane gating: weak binding for recognition, an external signal for release, and rapid reset for the next cycle.