Interfacial Charge Transfer Governs Bias-Polarity-Selective Electroluminescence in van der Waals Tunneling Heterostructures
exhibits nearly symmetric EL, confirming this mechanism. Our results establish interfacial charge transfer as a pivotal and tunable parameter governing IET-driven light emission and provide a general framework for engineering bias-polarity-selective optoelectronic functionalities in vdW heterostructures.
Authors
- Yuchen Gao (ORCID: https://orcid.org/0000-0002-1409-2976)
- Zichen Xu (ORCID: https://orcid.org/0000-0002-0457-6168)
- Takashi Taniguchi (ORCID: https://orcid.org/0000-0002-1467-3105)
- Kenji Watanabe (ORCID: https://orcid.org/0000-0003-3701-8119)
- Zuxin Chen (ORCID: https://orcid.org/0009-0000-7450-0620)
- Yu Ye (ORCID: https://orcid.org/0000-0001-6046-063X)
- Yilei Wang (ORCID: https://orcid.org/0000-0003-1826-6707)
- Yanping Li
- Lujunyu Wang
- Xinyue Huang
- Shiqi Yang
Institutions
- South China Normal University (CN)
- Peking University (CN)
- National Institute for Materials Science (JP)
- Beijing University of Technology (CN)
- Center for Interdisciplinary Studies (IN)
- Keystone College (US)
Publication Details
- Journal
- Nano Letters
- Published
- 2026-06-26
- DOI
- https://doi.org/10.1021/acs.nanolett.6c01567
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00