Polarization-Sensitive Fast-Response Solar-Blind UV Photodetector Based on Quasi-1d InSnS <sub>3</sub> Nanowires for Direct Polarimetric Imaging

Polarization-sensitive solar-blind deep ultraviolet (DUV) photodetectors have garnered significant attention due to their potential applications in both civilian and military contexts. However, the lack of polarization-sensitive solar-blind photodetectors combining high-polarization-sensitive and fast-response has constrained their widespread application in the DUV spectrum. Herein, a polarization-sensitive solar-blind DUV photodetector based on quasi-1D ternary InSnS 3 nanowires synthesized via directly chemical vapor transport growth is reported. The quasi-1D InSnS 3 nanowire-based device exhibits superior photodetection performance with high responsivity (1.65A W −1 ), high detectivity (1.85× 10 10 Jones), and an ultrafast response time (0.331 ms) under 265 nm light illumination at room temperature (RT). In addition, the InSnS 3 -based photodetector exhibits polarization-sensitive photoresponse with dichroic ratio of 1.13 at 265 nm. More importantly, an excellent solar-blind DUV imaging capability has been demonstrated with the quasi-1D ternary InSnS 3 nanowire photodetector, highlighting its great potential for ultraviolet imaging applications.

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Publication Details

Journal
The Journal of Physical Chemistry C
Published
2026-06-26
DOI
https://doi.org/10.1021/acs.jpcc.6c01888
Primary Topic
Nanowire Synthesis and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Polarization-Sensitive Fast-Response Solar-Blind UV Photodetector Based on Quasi-1d InSnS 3 Nanowires for Direct Polarimetric Imaging

C L Wang, Hongwei Xia, Yufang Liu, Yongjie Fan et al.
The Journal of Physical Chemistry C
Nanowire Synthesis and Applications
article

Polarization-Sensitive Fast-Response Solar-Blind UV Photodetector Based on Quasi-1d InSnS 3 Nanowires for Direct Polarimetric Imaging

C L Wang, Hongwei Xia, Yufang Liu, Yongjie Fan, Zhibin Zhao, Wen Yang, Yaohui Chen, Yan Li
article en

Abstract

Polarization-sensitive solar-blind deep ultraviolet (DUV) photodetectors have garnered significant attention due to their potential applications in both civilian and military contexts. However, the lack of polarization-sensitive solar-blind photodetectors combining high-polarization-sensitive and fast-response has constrained their widespread application in the DUV spectrum. Herein, a polarization-sensitive solar-blind DUV photodetector based on quasi-1D ternary InSnS 3 nanowires synthesized via directly chemical vapor transport growth is reported. The quasi-1D InSnS 3 nanowire-based device exhibits superior photodetection performance with high responsivity (1.65A W −1 ), high detectivity (1.85× 10 10 Jones), and an ultrafast response time (0.331 ms) under 265 nm light illumination at room temperature (RT). In addition, the InSnS 3 -based photodetector exhibits polarization-sensitive photoresponse with dichroic ratio of 1.13 at 265 nm. More importantly, an excellent solar-blind DUV imaging capability has been demonstrated with the quasi-1D ternary InSnS 3 nanowire photodetector, highlighting its great potential for ultraviolet imaging applications.

The Journal of Physical Chemistry C
Henan Academy of Sciences (CN), FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ), Industrial Measurement Systems (United States) (US), Henan Normal University (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 12%
Nanowire Synthesis and Applications
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