Research on Processing Temperature of Atmospheric Pressure Microwave Plasma Based on Fused Silica Etching

This study investigates the processing temperature characteristics and etching behavior of fused silica using an atmospheric pressure microwave plasma jet. The temperature distribution within the processing region was measured in real time via infrared thermography. The effects of microwave input power, argon flow rate, and CF4 flow rate on the processing temperature were systematically examined using a single-factor approach. Experimental results reveal a strong positive correlation between the plasma temperature and microwave power. The temperature initially rises and then declines with increasing argon flow, peaking at 3 slm, while it increases and eventually stabilizes with higher CF4 flow. Fixed-point etching demonstrates that the etching rate increases with rising processing temperature. Furthermore, heat accumulation during prolonged dwell time leads to a nonlinear increase in the removal rate. This effect can be effectively mitigated by employing a multi-segment processing strategy, enabling more stable and controllable material removal. The effectiveness of this processing method has also been verified on a fused quartz sub-mirror.