SOO-Native Contact Packets and Relational Path Accommodation: An EAS Account of Charge-Like Attraction and Repulsion

This paper is archived as a speculative research work. This paper develops an EAS scalar-field account of charge-like attraction and repulsion without introducing electric charge, force, current, gauge potential, electromagnetic field, photon exchange, or Coulomb interaction as primitive ontology. The construction begins with the vacuum as zero-report unresolved balanced scalar-field potentiality. Defined association makes that potentiality reportable, and SOO point-to-associate comparison lifts it into balanced scalar contrast. Bounded support formation then organizes this contrast into support-owned rank-3 structure with active boundary/dressing contact. Handed rank-3 exposure orders the balanced pair across the active contact, giving: ΔΦ(b_{H,r}) = s_H a, ΔΦ(d_{H,r}) = -s_H a Because SOO is relation-facing rather than endpoint-only, the complete contact report is the boundary/dressing contrast: χ_{H,r} = ΔΦ(b_{H,r}) - ΔΦ(d_{H,r}) = 2s_H a The paper proves by SOO path-sector closure that, for each independent completed rank-3 relational path P between bounded supports, same handed contact orientation produces relation-complete packet reinforcement and path lengthening, ΔL(P) = +1 whereas opposite handed contact orientation produces packet cancellation or relation-silence and path shortening, ΔL(P) = -1 In both cases the path-local magnitude is: |ΔL(P)| / L(P) = 1 / L(P) This is not a Coulomb law or a QED amplitude; it is a scalar-field path-sector closure theorem. The interface may classify same-orientation path lengthening as repulsion-like and opposite-orientation path shortening as attraction-like, but that classification is downstream of the EAS result. The paper also separates this contact-path theorem from the prior completed charge-class layer: ρ_H → Q̂ = C_Q(ρ_H) from current-facing Noether reports, from electromagnetic-field-facing holonomy, and from mass-facing lepton-family support spans.