Anisotropic multiband magnetotransport in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi>LaAg</mml:mi> <mml:mn>2</mml:mn> </mml:msub> <mml:msub> <mml:mi>Ge</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:mrow> <

${\mathrm{ThCr}}_{2}{\mathrm{Si}}_{2}$-type intermetallics are layered conductors in which crystallographic anisotropy and multiband electronic states often give rise to characteristic magnetotransport phenomena. Here we report the molecular-beam epitaxy growth of ${\mathrm{LaAg}}_{2}{\mathrm{Ge}}_{2}$ thin films on MgO(001) and their magnetotransport properties. Hall measurements are well described by an effective two-carrier model with a high-mobility minority electron coexisting with a low-mobility majority hole. The observed positive magnetoresistance of 22.5% at 9 T exceeds the prediction of the isotropic two-band Drude model by more than an order of magnitude, indicating an anisotropic multisheet Fermi-surface origin. Consistently, angle-dependent magnetoresistance exhibits a dominant twofold anisotropy and additional reproducible dip/peak features at characteristic tilt angles that are nearly independent of field and temperature. These results extend our understanding of the anisotropic electronic transport in thin-film germanides within the ${\mathrm{ThCr}}_{2}{\mathrm{Si}}_{2}$ family.