Piezoelectric manipulation and stacking-dependent magnetism in ferrovalley materials

Abstract The electronic transport characteristics of two-dimensional (2D) systems have widespread application prospects in the fabrication of multifunctional nanodevices. However, the current research for basic transport phenomena, such as anomalous valley Hall effect (AVHE) and piezoelectric response, is limited to discrete discussion. Here, we theoretically propose a valley-piezoelectricity coupling strategy beyond the existing paradigm to realize AVHE and layer Hall effect (LHE) in ferrovalley (FV) systems, and its essential principle can be extended to general valleytronic materials. Through first-principles calculations, we demonstrate that the large polarized electric field of 2.8×10 6 (1.67×10 7 ) V/m can be induced by 0.1% uniaxial strain in FV 2 H -LaHF (1 T -LaHF) monolayers. In addition, the microscopic mechanism of interlayer antiferromagnetic (AFM) state of 2 H -LaHF bilayer is uncovered by the spin Hamiltonian and super-superexchange (SSE) interaction. Our findings pave the way for new explorations of valley Hall-related effect involving piezoelectricity.