Ferroelectric Behavior of Micro‐ to Submicron‐Scale HZO Capacitors: Impact of the Perimeter‐to‐Area Ratio

ABSTRACT The aggressive scaling of electronic devices has brought ferroelectric materials to the forefront of nanoscale research, where lateral dimensions strongly influence switching dynamics and device performance. In this context, W/ Hf 0.5 Zr 0.5 O 2 / p‐Ge capacitors with top electrode sizes ranging from 10 µm down to 0.1 µm are investigated using conductive atomic force microscopy (C‐AFM). Frequency‐dependent measurements reveal that peak switching currents ( I sw ) increase with sweep rate, yet the total switched charge remains nearly constant, consistent with full polarization reversal in micro‐ and submicron devices. Positive‐Up‐Negative‐Down (PUND) analysis further isolates the switching current, allowing reconstruction of polarization–voltage ( P‐ ‐ V ) loops and quantification of remnant polarization. The smallest devices (0.01 µm 2 ) exhibit switching currents below the detection threshold due to parasitic capacitance, masking intrinsic ferroelectric behavior. In contrast, submicron capacitors display an apparent increase of remanent polarization attributed to the larger perimeter‐to‐area ratio, emphasizing the role of edge‐dominated switching. Together, these findings establish C‐AFM as a powerful, spatially resolved technique for probing ferroelectric switching in realistic device geometries, providing essential insights for non‐volatile memory and neuromorphic applications.