Phase Transition and Thermoelectric Performance of Solid-State-Synthesized Wittichenite Cu3BiS3

Wittichenite (Cu3BiS3) was synthesized by mechanical alloying (MA) followed by hot pressing (HP), and its phase evolution, thermal stability, charge transport behavior, and thermoelectric performance were systematically examined. X-ray diffraction analysis of the MA powders revealed broadened diffraction peaks, indicating reduced crystallinity and refined crystallite size. After HP consolidation, a well-defined single-phase orthorhombic wittichenite structure was obtained. These results demonstrate that the mechanically induced solid-state synthesis was effectively initiated during MA and subsequently completed through crystallization, defect relaxation, and densification during HP. The MA–HP processed specimens exhibited high relative densities of 94–98% of the theoretical value and a homogeneous microstructure without detectable compositional segregation or grain-boundary enrichment, confirming the formation of a structurally and chemically stable single-phase bulk material. Thermal analysis identified a reversible polymorphic phase transition from P212121 to Pnma at low temperature, followed by structural relaxation and the onset of partial decomposition at higher temperatures, indicating that Cu3BiS3 retains structural integrity below 700 K, which defines the relevant operating window for thermoelectric evaluation. The samples exhibited p-type semiconducting behavior, with electrical conductivity increasing with temperature due to thermally activated hole transport and showing an additional enhancement across the structural transition region. The Seebeck coefficient remained positive over the entire temperature range and decreased gradually with increasing temperature, consistent with semiconductor transport characteristics. The thermal conductivity remained low at 0.30–0.38 W·m−1·K−1, with a negligible electronic contribution, confirming that heat transport is dominated by lattice phonon scattering. As a result of the combined increase in electrical conductivity and intrinsically low thermal conductivity, the dimensionless figure of merit (ZT) increased continuously with temperature and reached 0.17 at 673 K. These results demonstrate that the MA–HP route provides an effective and scalable strategy for producing phase-pure Cu3BiS3 with controlled microstructure and reproducible thermoelectric performance.

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Publication Details

Journal
Inorganics
Published
2026-06-18
DOI
https://doi.org/10.3390/inorganics14060166
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
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article

Phase Transition and Thermoelectric Performance of Solid-State-Synthesized Wittichenite Cu3BiS3

Il‐Ho Kim, Pooloun Lee
Inorganics
Advanced Thermoelectric Materials and Devices
article

Phase Transition and Thermoelectric Performance of Solid-State-Synthesized Wittichenite Cu3BiS3

Il‐Ho Kim, Pooloun Lee
article en

Abstract

Wittichenite (Cu3BiS3) was synthesized by mechanical alloying (MA) followed by hot pressing (HP), and its phase evolution, thermal stability, charge transport behavior, and thermoelectric performance were systematically examined. X-ray diffraction analysis of the MA powders revealed broadened diffraction peaks, indicating reduced crystallinity and refined crystallite size. After HP consolidation, a well-defined single-phase orthorhombic wittichenite structure was obtained. These results demonstrate that the mechanically induced solid-state synthesis was effectively initiated during MA and subsequently completed through crystallization, defect relaxation, and densification during HP. The MA–HP processed specimens exhibited high relative densities of 94–98% of the theoretical value and a homogeneous microstructure without detectable compositional segregation or grain-boundary enrichment, confirming the formation of a structurally and chemically stable single-phase bulk material. Thermal analysis identified a reversible polymorphic phase transition from P212121 to Pnma at low temperature, followed by structural relaxation and the onset of partial decomposition at higher temperatures, indicating that Cu3BiS3 retains structural integrity below 700 K, which defines the relevant operating window for thermoelectric evaluation. The samples exhibited p-type semiconducting behavior, with electrical conductivity increasing with temperature due to thermally activated hole transport and showing an additional enhancement across the structural transition region. The Seebeck coefficient remained positive over the entire temperature range and decreased gradually with increasing temperature, consistent with semiconductor transport characteristics. The thermal conductivity remained low at 0.30–0.38 W·m−1·K−1, with a negligible electronic contribution, confirming that heat transport is dominated by lattice phonon scattering. As a result of the combined increase in electrical conductivity and intrinsically low thermal conductivity, the dimensionless figure of merit (ZT) increased continuously with temperature and reached 0.17 at 673 K. These results demonstrate that the MA–HP route provides an effective and scalable strategy for producing phase-pure Cu3BiS3 with controlled microstructure and reproducible thermoelectric performance.

InorganicsVol. 14(6)
Korea National University of Transportation (KR)
Openalex Percentile: Top 13%
Advanced Thermoelectric Materials and Devices
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