Stress Dissipation in Stretchable Organic Field‐Effect Transistors: Evaluation Metrics and Pathways

ABSTRACT The rapid advancement of the Internet of Things (IoT) and artificial intelligence (AI) has fueled increasing interest in stretchable organic field‐effect transistors (SOFETs), which serve as essential building blocks for flexible electronic systems, such as wearable sensors and bio‐integrated devices. Despite their promising applications, achieving efficient stress dissipation while maintaining electrical performance under mechanical deformation remains a major challenge. This review systematically examines the impact of mechanical stress on the operational stability and integrity of SOFETs, with a focused discussion on key evaluation metrics and underlying mechanistic principles. By elucidating fundamental pathways for stress‐dissipation, this paper aims to provide design guidelines for developing highly durable and electrically robust SOFETs, thereby advancing their integration into next‐generation soft electronics.