A 40 Gbps low-power inverter-based CNTFET optical receiver

This paper presents a low-power 40 Gbps optical receiver implemented using 32 nm carbon nanotube field-effect transistor (CNTFET) technology. The proposed receiver architecture consists of a modified inverter-based transimpedance amplifier (TIA) followed by cascaded limiting amplifiers (LAs). Using the g m /I D design methodology, the TIA is optimized to achieve a balanced trade-off among gain, bandwidth, noise, and power consumption. Simulation results indicate that the proposed TIA achieves a transimpedance gain of 47.6 dBΩ, a − 3 dB bandwidth of 28.4 GHz, and an input-referred noise current of 15.5 pA/√Hz, while consuming only 183 µW and occupying an area of 3.93 μm². The complete receiver provides an overall gain of 77.8 dBΩ, a − 3 dB bandwidth of 29.5 GHz, and a total power consumption of 1377 µW within a layout area of 49.19 μm². In addition, analytical predictions derived from the g m /I D framework are in close agreement with the simulation results, thereby validating the adopted design methodology. Compared with conventional CMOS-based implementations, the proposed CNTFET-based receiver demonstrates notable improvements in power efficiency, noise performance, and integration density, indicating its potential for next-generation optical interconnects and communication systems.

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Publication Details

Journal
Scientific Reports
Published
2026-06-18
DOI
https://doi.org/10.1038/s41598-026-54513-0
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
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article

A 40 Gbps low-power inverter-based CNTFET optical receiver

Zahra Alaie, Nazanin Zamani, Mehdi Amoon, Mahmoud Daneshvar Farzanegan
Scientific Reports
Radio Frequency Integrated Circuit Design
article

A 40 Gbps low-power inverter-based CNTFET optical receiver

Zahra Alaie, Nazanin Zamani, Mehdi Amoon, Mahmoud Daneshvar Farzanegan
article en

Abstract

This paper presents a low-power 40 Gbps optical receiver implemented using 32 nm carbon nanotube field-effect transistor (CNTFET) technology. The proposed receiver architecture consists of a modified inverter-based transimpedance amplifier (TIA) followed by cascaded limiting amplifiers (LAs). Using the g m /I D design methodology, the TIA is optimized to achieve a balanced trade-off among gain, bandwidth, noise, and power consumption. Simulation results indicate that the proposed TIA achieves a transimpedance gain of 47.6 dBΩ, a − 3 dB bandwidth of 28.4 GHz, and an input-referred noise current of 15.5 pA/√Hz, while consuming only 183 µW and occupying an area of 3.93 μm². The complete receiver provides an overall gain of 77.8 dBΩ, a − 3 dB bandwidth of 29.5 GHz, and a total power consumption of 1377 µW within a layout area of 49.19 μm². In addition, analytical predictions derived from the g m /I D framework are in close agreement with the simulation results, thereby validating the adopted design methodology. Compared with conventional CMOS-based implementations, the proposed CNTFET-based receiver demonstrates notable improvements in power efficiency, noise performance, and integration density, indicating its potential for next-generation optical interconnects and communication systems.

Scientific Reports
Islamic Azad University of Najafabad (IR)
Affordable and clean energy
Openalex Percentile: Top 10%
Radio Frequency Integrated Circuit Design
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