A Simple Ni/Si Schottky Junction Wavelength Sensor for Dual-Wavelength Mixed-Light Color Detection

In this study, a self-powered wavelength sensor is developed by integrating two back-to-back Ni/Si Schottky junction photodetectors on a single silicon substrate. This structurally simple sensor achieves dual functionality, namely broadband wavelength discrimination and quantitative mixed-color analysis, without requiring external filters or optical components. Owing to the intrinsic wavelength-dependent absorption of silicon, the two detectors exhibit distinctly different spectral responses. As a result, a monotonic relationship between their photocurrent ratio and the incident wavelength enables broadband wavelength discrimination from 365 to 1080 nm, with a mean absolute error of 4.22 nm. Moreover, by inverting the photoresponse using a parameter matrix, the sensor can quantitatively resolve the intensities of two constituent monochromatic components (540 and 620 nm) with mean absolute percentage errors of 4.24 and 2.84%, respectively, and identify the color of the mixed light. By further integrating backend signal-processing circuitry, the system accomplishes real-time identification of both monochromatic wavelengths and binary mixed-light colors. With its simple architecture, self-powered operation, and high integrability, this device shows strong potential for compact and embedded spectral-sensing applications.

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Publication Details

Journal
ACS Applied Electronic Materials
Published
2026-06-19
DOI
https://doi.org/10.1021/acsaelm.6c00891
Primary Topic
Transition Metal Oxide Nanomaterials
Type
article
Field-Weighted Citation Impact
0.00

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article

A Simple Ni/Si Schottky Junction Wavelength Sensor for Dual-Wavelength Mixed-Light Color Detection

Yimeng Gao, C M Wang, Xiudong Lu, Lin‐Bao Luo et al.
ACS Applied Electronic Materials
Transition Metal Oxide Nanomaterials
article

A Simple Ni/Si Schottky Junction Wavelength Sensor for Dual-Wavelength Mixed-Light Color Detection

Yimeng Gao, C M Wang, Xiudong Lu, Lin‐Bao Luo, T Wang, Bo Yu, Fengxia Liang, Yi-Xiang Wang, Junhan Qian, Mengfei Liang
article en

Abstract

In this study, a self-powered wavelength sensor is developed by integrating two back-to-back Ni/Si Schottky junction photodetectors on a single silicon substrate. This structurally simple sensor achieves dual functionality, namely broadband wavelength discrimination and quantitative mixed-color analysis, without requiring external filters or optical components. Owing to the intrinsic wavelength-dependent absorption of silicon, the two detectors exhibit distinctly different spectral responses. As a result, a monotonic relationship between their photocurrent ratio and the incident wavelength enables broadband wavelength discrimination from 365 to 1080 nm, with a mean absolute error of 4.22 nm. Moreover, by inverting the photoresponse using a parameter matrix, the sensor can quantitatively resolve the intensities of two constituent monochromatic components (540 and 620 nm) with mean absolute percentage errors of 4.24 and 2.84%, respectively, and identify the color of the mixed light. By further integrating backend signal-processing circuitry, the system accomplishes real-time identification of both monochromatic wavelengths and binary mixed-light colors. With its simple architecture, self-powered operation, and high integrability, this device shows strong potential for compact and embedded spectral-sensing applications.

ACS Applied Electronic Materials
Hefei University of Technology (CN), University of Chinese Academy of Sciences (CN)
National Natural Science Foundation of China, Natural Science Foundation of Anhui Province, Fundamental Research Funds for the Central Universities
Affordable and clean energy
Openalex Percentile: Top 14%
Transition Metal Oxide Nanomaterials
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