Direct Visualization of MOF Film CVD Growth Using a Dual-Heating Zone <i>In Situ</i> TEM Microreactor
Despite the critical role of chemical vapor deposition (CVD) in materials preparation, real-time nanoscale visualization of its processes remains challenging, primarily because conventional single-heating-zone in situ transmission electron microscopy (TEM) reactors cannot faithfully replicate realistic precursor vaporization and deposition conditions. Here, we present the TempTwin CVD-Reactor, a dual-heating-zone gas-phase in situ TEM chip that precisely integrates independently controlled source and deposition regions. Leveraging ultrathin silicon nitride windows, this device achieves angstrom-level resolution up to 900 °C, enabling direct visualization of metal–organic framework (MOF) film growth kinetics. Our observations reveal that ZIF-8 CVD deposition on ZnO nanowires follows a Volmer–Weber island growth mode─discrete nucleation and subsequent coalescence─rather than a layer-by-layer mechanism. By quantitatively tracking shell-thickness evolution and confirming composition via energy-dispersive X-ray spectroscopy, this TempTwin CVD-Reactor enables realistic simulation of key CVD conditions for MOF growth and provides critical insights into gas–solid reaction mechanisms.
Authors
- Muyu Yan
- Pengcheng Xu (ORCID: https://orcid.org/0000-0001-8651-208X)
- Xinxin Li (ORCID: https://orcid.org/0000-0001-6760-0957)
- Ming Li (ORCID: https://orcid.org/0000-0002-7279-2460)
- Ran Guo (ORCID: https://orcid.org/0000-0002-2438-8164)
- Shaotong Hu
- Tao Lu
- Ying Chen
Institutions
- University of Debrecen (HU)
- Chinese Academy of Sciences (CN)
- Shanghai Institute of Microsystem and Information Technology (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- Nano Letters
- Published
- 2026-06-18
- DOI
- https://doi.org/10.1021/acs.nanolett.6c00814
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00