Independent switching of interfacial exchange bias via antiferromagnet-mediated spin-orbit torque

Electrical control of exchange bias in spintronic heterostructures typically relies on magnetic field cooling, ferromagnet reversal, or metallic antiferromagnets. Here, we report the simultaneous electrical switching of exchange bias and longitudinal resistance via pulse currents in a Pt/NiO/NiFe heterostructure. The switching direction of interfacial pinned spins is independent of the NiFe layer's magnetization, contrasting with ferromagnet-governed scenarios. By systematically excluding thermal and Oersted-field effects, we attribute this behavior to the reversal of interfacial pinned spins driven by spin-orbit torque mediated through the antiferromagnetic insulator NiO. Supported by spin Hall magnetoresistance measurements and macro-spin simulations, these results demonstrate an insulator-mediated switching mechanism that operates without ferromagnet reversal or charge transport through the antiferromagnet. This work provides a platform for investigating interfacial spin dynamics in antiferromagnetic insulator-based heterostructures.

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Publication Details

Journal
Cell Reports Physical Science
Published
2026-06-19
DOI
https://doi.org/10.1016/j.xcrp.2026.103404
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
0.00

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article

Independent switching of interfacial exchange bias via antiferromagnet-mediated spin-orbit torque

Xicheng Zhang, A. Hamzić, A. Fert, Chenyue Wen et al.
Cell Reports Physical Science
Magnetic properties of thin films
article

Independent switching of interfacial exchange bias via antiferromagnet-mediated spin-orbit torque

Xicheng Zhang, A. Hamzić, A. Fert, Chenyue Wen, Weisheng S. Zhao, Xueying Zhang, Huaiwen Yang, Chengyi Yang, Zhizhong Zhang, Danrong Xiong, Runrun Hao, Chunxu Wang, Qingtao Xia, Shishen Yan, Tao Zhu, Dapeng Zhu
article en

Abstract

Electrical control of exchange bias in spintronic heterostructures typically relies on magnetic field cooling, ferromagnet reversal, or metallic antiferromagnets. Here, we report the simultaneous electrical switching of exchange bias and longitudinal resistance via pulse currents in a Pt/NiO/NiFe heterostructure. The switching direction of interfacial pinned spins is independent of the NiFe layer's magnetization, contrasting with ferromagnet-governed scenarios. By systematically excluding thermal and Oersted-field effects, we attribute this behavior to the reversal of interfacial pinned spins driven by spin-orbit torque mediated through the antiferromagnetic insulator NiO. Supported by spin Hall magnetoresistance measurements and macro-spin simulations, these results demonstrate an insulator-mediated switching mechanism that operates without ferromagnet reversal or charge transport through the antiferromagnet. This work provides a platform for investigating interfacial spin dynamics in antiferromagnetic insulator-based heterostructures.

Cell Reports Physical ScienceVol. 7(7)
Centre National de la Recherche Scientifique (FR), University of Arizona (US), Shandong University (CN), University of Zagreb (HR), Chinese Academy of Sciences (CN), Université Paris-Saclay (FR), China Spallation Neutron Source (CN), Songshan Lake Materials Laboratory (CN), Laboratoire Albert Fert (FR), Institute of Physics (CN), National Laboratory for Superconductivity (CN), State Key Laboratory of Crystal Materials, Beihang University (CN)
National Natural Science Foundation of China, Key Technology Research and Development Program of Shandong
Affordable and clean energy
Openalex Percentile: Top 7%
Magnetic properties of thin films
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