Schottky Barrier as Photodetector Based on Nanostructured Cd _<i>x</i> Zn _{1– <i>x</i>} S along with Switchable Photocurrent Generation

High Resolution Image Download MS PowerPoint Slide In this report, Schottky barrier devices (SBDs) have been fabricated based on CdS nanorods (NRs), ZnS nanoparticles (NPs), and Cd 0.5 Zn 0.5 S (NPs + NRs) using a cost-effective spin coating technique with the use of metallic “Ag”. Photodetection properties based on fabricated Schottky barriers of CdS NRs/Ag, Cd 0.5 Zn 0.5 S (NPs+NRs)/Ag and ZnS NPs/Ag have been studied. Before device fabrication, a simple chemical precipitation method has been used for the growth of CdS NRs, Cd 0.5 Zn 0.5 S (NPs + NRs) and ZnS NPs. Formations of nanostructures have been observed through HRTEM and FESEM. The structural and optical analyses of the grown nanostructures have been computed from XRD, XPS, UV–vis spectra and Raman studies. The responsivity, detectivity,and response time of the three photodetectors based on SBDs have been measured and compared. The photodetectors exhibited a high rectification ratio up to 10 6 within ±1 V in the dark and a sharp photoresponse behavior under light illumination. Photoresponse analysis showed that a photodetector based on SBD of CdS NRs was highly sensitive to light illumination with detectivity ≈2.75 × 10 5 jones and responsivity ≈2.2 × 10 –6 A/W. The above parameters were reduced for photodetector based on SBD of ZnS NPs. Also, switchable photocurrent generation have been observed for three photodetectors. The photoresponse rise/fall times of CdS NRs based SBD was ≈187/194 ms and showed fast response speed compared to other two photodetectors based on SBDs.