GaN/Sn:Ga <sub>2</sub> O <sub>3</sub> @MgO/Graphene Core–Shell Nanowires for Self-Powered Deep-UV Photodetector
To address high dark current and surface defects in β-Ga 2 O 3 nanowire (NW) photodetectors, we report a multilayered core–shell heterostructure based on GaN/Sn:Ga 2 O 3 @MgO/graphene. Sn-doped Ga 2 O 3 NW arrays were grown via CVD on GaN substrates, followed by thermal evaporation of an MgO passivation shell and spin-coating of graphene. The MgO shell suppresses surface-state recombination and facilitates carrier separation through band bending, while the graphene layer optimizes carrier-transport paths and energy-level matching. Under 254 nm illumination (82 μW/cm 2 ), the device exhibits outstanding performance: a low dark current of 85.6 pA, a high PDCR of 2.13 × 10 4, a responsivity of 0.71 A/W, and a specific detectivity ( D *) of 2.40 × 10 13 Jones. This synergistic architecture provides a robust strategy for high-performance deep-ultraviolet (DUV) detection.
Authors
- Wenqiang Lu (ORCID: https://orcid.org/0000-0001-6252-0448)
- Bohan Zhang (ORCID: https://orcid.org/0000-0002-8410-3853)
- Yubin Liu (ORCID: https://orcid.org/0000-0003-4682-2651)
- Siyi He
- Muhammad Abdul Salam (ORCID: https://orcid.org/0009-0002-4219-7158)
- Zhiyang He
- Jingpeng Tan
- S M Yang
- Chengming Jiang
Institutions
- Chongqing University of Posts and Telecommunications (CN)
- Beijing Founder Electronics (China) (CN)
- Chongqing Institute of Green and Intelligent Technology (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- ACS Applied Nano Materials
- Published
- 2026-06-17
- DOI
- https://doi.org/10.1021/acsanm.6c01763
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00