High‐Temporal Dynamic Diamond‐Based Deep Ultraviolet Photodetector via Femtosecond Laser Induced Graphitization

ABSTRACT To realize all‐carbon diamond‐based photodetectors for high‐temperature sensing, an integrated diamond/graphite deep‐ultraviolet (DUV) detector is demonstrated and fabricated via femtosecond (fs) laser‐induced graphitization. The influence of the graphitized transition layer on the diamond surface is investigated, and the carrier transport mechanism across the interface under high‐temperature conditions is analyzed. At room‐temperature (RT), the integrated diamond/graphite detector exhibits robust performance: a photo‐to‐dark current ratio (PDCR) of 7 × 10 5 at 70 V bias, a responsivity of 110 A/W at 80 V along with a detectivity of 5.8 × 10 14 Jones. Notably, the device displays fast temporal dynamics, featuring decay time constants of 28 µs ( τ 1 ) and 2.5 ms ( τ 2 ). In addition, the device achieves a peak responsivity of 440 A/W at 570 K. Our results offer a feasible route to fabricating the high‐performance diamond‐based DUV photodetectors for operation in high‐temperature and harsh environments.

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Publication Details

Journal
Advanced Optical Materials
Published
2026-06-17
DOI
https://doi.org/10.1002/adom.71372
Primary Topic
Diamond and Carbon-based Materials Research
Type
article
Field-Weighted Citation Impact
0.00

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High‐Temporal Dynamic Diamond‐Based Deep Ultraviolet Photodetector via Femtosecond Laser Induced Graphitization

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article en

Abstract

ABSTRACT To realize all‐carbon diamond‐based photodetectors for high‐temperature sensing, an integrated diamond/graphite deep‐ultraviolet (DUV) detector is demonstrated and fabricated via femtosecond (fs) laser‐induced graphitization. The influence of the graphitized transition layer on the diamond surface is investigated, and the carrier transport mechanism across the interface under high‐temperature conditions is analyzed. At room‐temperature (RT), the integrated diamond/graphite detector exhibits robust performance: a photo‐to‐dark current ratio (PDCR) of 7 × 10 5 at 70 V bias, a responsivity of 110 A/W at 80 V along with a detectivity of 5.8 × 10 14 Jones. Notably, the device displays fast temporal dynamics, featuring decay time constants of 28 µs ( τ 1 ) and 2.5 ms ( τ 2 ). In addition, the device achieves a peak responsivity of 440 A/W at 570 K. Our results offer a feasible route to fabricating the high‐performance diamond‐based DUV photodetectors for operation in high‐temperature and harsh environments.

Advanced Optical Materials
Sun Yat-sen University (CN), National University of Defense Technology (CN), Zhengzhou University of Light Industry (CN), Shanghai Dianji University (CN)
National Natural Science Foundation of China, Fundamental Research Funds for the Central Universities, Basic and Applied Basic Research Foundation of Guangdong Province
Openalex Percentile: Top 15%
Diamond and Carbon-based Materials Research
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