Resonant Tunneling in Laser‐Dressed Double‐Barrier Nanostructures: Role of Potential Geometry

ABSTRACT This work examines resonant tunneling in laser‐dressed double‐barrier semiconductor nanostructures using the transfer matrix method. Rectangular, parabolic, and triangular barrier geometries are considered to examine the influence of potential shape on resonance tunneling behavior. The effect of an intense laser field is treated within the effective mass and high‐frequency approximation, with the roles of the external electric field, barrier height, and well width. The results show that increasing the laser field parameter significantly lowers the resonance energies due to laser‐induced modification of the effective confinement potential. External electric fields produce Stark‐like shifts. Barrier height variations lead to a shift of resonance energies to higher energy, reflecting stronger confinement, while increasing the well width causes a pronounced reduction in resonance energies as a consequence of weakened quantum confinement. Among the investigated geometries, parabolic barriers display smoother and more stable resonance evolution, whereas triangular barriers show stronger tunability under external perturbations. These findings demonstrate that the combined use of laser dressing and potential shape engineering provides an efficient mechanism for controlling resonant tunneling characteristics in nanoscale electronic and optoelectronic devices.