Project Ouroboros: The Consequence -Two Converging Crises, One Crystalline Foundation, and the Closed Loop That Connects Them

Modern computing faces two converging physical crises. The von Neumann bottleneck—the energy cost of moving data between processor and memory—consumes approximately 80% of the power dissipated by state-of-art AI accelerators. The interconnect thermal wall—resistive heating in copper wires approaching their electromigration limit— constrains the density of computation that can be packed onto a single die. Spin-orbit torque (SOT) devices and topological edge states address each crisis, respectively. Both require the same precondition: a defect-free crystalline platform on silicon with dislocation density nd ≤ 108 cm−2. The Angelica series [1–3] has already built this platform. Project Ouroboros is its consequence. We demonstrate two directions that emerge naturally from the same Alchemy B (Eu,Pr,Y)2O3 foundation. Direction A (E-controls-M): the Angie’s Grading strain field enhances Rashba spin-orbit coupling (BirPikus model, 1.4× conservative; 2.4× optimistic), enabling voltage-driven magnetisation switching at Esw = 5.1 × 10−16J with zero Joule heating at the storage site. Direction B (M-controls-E): Fe3GaTe2 (TC ≈ 350K), transferred via van der Waals assembly through monolayerh-BN (exchange survival 80%), imposes magnetic proximity on the GaN 2DEG, inducing topological edge states with ballistic conductance G = e2/h immune to backscat tering. These directions are not independent applications. They are two faces of a single closed loop: strain generates Rashba (geometry→E); Rashba drives SOT switching (E→M); magnetic proximity controls edge conductance (M→E). The serpent consumes its own tail. Keywords: von Neumann bottleneck; interconnect thermal wall; Rashba effect; Bir-Pikus Hamiltonian; SOTMRAM; topological transport; Fe3GaTe2; GaN 2DEG; van der Waals heterostructure; Angie’s Grading