Fundamentals of Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) and Safety Management of Chemical SubstancesPart 3 : Reaction Analysis for Chemical Vapor Deposition (CVD) Reaction, and Process Controls

Part 2 explained the fundamentals of chemical reaction kinetics for CVD and ALD. This lecture applies these principles to the analysis of CVD reactions. First, Arrhenius plots illustrating typical CVD systems are presented, revealing chemical reaction rate-limited and mass transport rate-limited regions. In the mass transport-limited region, supply limitation exhibits zero activation energy and is temperature-independent. Reaction order analysis indicates surface reaction limitation. At high partial pressure, surface reactions reach adsorption saturation, and the rate ceases to increase, consistent with the Langmuir adsorption–desorption model. These plots delineate kinetic regimes and inform process-window selection, which underpins the industrial optimization of CVD, including blanket tungsten-CVD (W-CVD). As an example, this approach is applied to fabricating Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) contact holes. Deposition under Langmuir-type high-pressure conditions achieves superior W filling and coverage. Finally, the surface reaction model and its corresponding rate equation are discussed.