Hafnium-based and two-dimensional ferroelectric tunnel junctions: a mini review
Abstract Ferroelectric tunnel junctions (FTJs), which feature an ultrathin ferroelectric barrier sandwiched between two electrodes, have emerged as a promising candidate for next-generation non-volatile memories. This review focuses on two emerging material systems: CMOS-compatible hafnium-based ferroelectrics and two-dimensional (2D) van der Waals ferroelectrics (e.g., α-In₂Se₃, CuInP₂S₆, and h-BN). It summarizes the latest research progress and concludes by outlining the challenges and future research directions.
Authors
- Yizhong Guo (ORCID: https://orcid.org/0000-0003-1402-5922)
- Zhijun Ma (ORCID: https://orcid.org/0000-0002-4821-9154)
- Xiumei Dong (ORCID: https://orcid.org/0000-0002-4865-8771)
Publication Details
- Journal
- NPG Asia Materials
- Published
- 2026-06-09
- DOI
- https://doi.org/10.1038/s41427-026-00657-4
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Hubei Province