All-optical switching in CoFeB-based artificial ferrimagnets

We demonstrate deterministic all-optical switching (AOS) triggered by single femtosecond laser pulses in CoFeB-based artificial ferrimagnets consisting of Co/Gd/CoFeB trilayers. We show that AOS in this trilayer system is primarily governed by the energetics of nonequilibrium demagnetization, rather than by the magnetic anisotropy barrier in equilibrium. Unlike existing AOS multilayer systems in which CoFeB layers are coupled indirectly through a nonmagnetic layer, each layer in our system, including the CoFeB layer, is directly antiferromagnetically exchange-coupled by a strong interfacial proximity effect. This direct coupling enables a purely thermal toggle switching process across the entire stack, facilitating ultrafast optical writing. Moreover, these thin film structures are fully compatible with the high-magnetoresistance CoFeB/MgO/CoFeB tunnel junction architecture, making this system a promising building block for the development of all-optically driven magnetic tunnel junctions, which are a key component for future high-speed, low-power logic and memory applications.

Authors

Institutions

Publication Details

Journal
Applied Physics Letters
Published
2026-06-08
DOI
https://doi.org/10.1063/5.0328535
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
0.00

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

All-optical switching in CoFeB-based artificial ferrimagnets

R. Takahashi, Y. Ohtsubo, S. Sakai, M. Notomi et al.
Applied Physics Letters
Magnetic properties of thin films
article

All-optical switching in CoFeB-based artificial ferrimagnets

R. Takahashi, Y. Ohtsubo, S. Sakai, M. Notomi, T. Ueno, M. Ono, S. Li, P. D. Bentley, Y. Kotani, H. Wadati
article en

Abstract

We demonstrate deterministic all-optical switching (AOS) triggered by single femtosecond laser pulses in CoFeB-based artificial ferrimagnets consisting of Co/Gd/CoFeB trilayers. We show that AOS in this trilayer system is primarily governed by the energetics of nonequilibrium demagnetization, rather than by the magnetic anisotropy barrier in equilibrium. Unlike existing AOS multilayer systems in which CoFeB layers are coupled indirectly through a nonmagnetic layer, each layer in our system, including the CoFeB layer, is directly antiferromagnetically exchange-coupled by a strong interfacial proximity effect. This direct coupling enables a purely thermal toggle switching process across the entire stack, facilitating ultrafast optical writing. Moreover, these thin film structures are fully compatible with the high-magnetoresistance CoFeB/MgO/CoFeB tunnel junction architecture, making this system a promising building block for the development of all-optically driven magnetic tunnel junctions, which are a key component for future high-speed, low-power logic and memory applications.

Applied Physics LettersVol. 128(23)
Tokyo Institute of Technology (JP), University of Hyogo (JP), NeoPhotonics (United States) (US), NTT Basic Research Laboratories (JP), Japan Synchrotron Radiation Research Institute (JP), National Institutes for Quantum Science and Technology (JP)
Japan Society for the Promotion of Science
Openalex Percentile: Top 6%
Magnetic properties of thin films
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

All-optical switching in CoFeB-based artificial ferrimagnets — R. Takahashi, Y. Ohtsubo, et al. · Applied Physics Letters (2026) | TGRS Research Map | TGRS