Metal-insulator transition at low densities in a two-dimensional low-bandgap semiconductor
and contact resistances as low as 1.31 kΩ·μm at 1.5 K. These characteristics enable a gate-tunable metal-insulator transition at carrier densities down to 2.75 × 10¹⁰ cm⁻². Transport in this regime is dominated by electron-electron interactions, as supported by finite-temperature scaling. Below 50 K, however, an additional disorder-related energy scale emerges, consistent with percolation. These results demonstrate that disorder remains relevant even in high-mobility devices, challenging a purely interaction-driven transition in two-dimensional systems.
Authors
- Ahmet Avşar (ORCID: https://orcid.org/0000-0003-0173-7242)
- Thiti Taychatanapat (ORCID: https://orcid.org/0000-0002-2472-9758)
- Oleg V. Yazyev (ORCID: https://orcid.org/0000-0001-7281-3199)
- Johan Félisaz
- Oldřich Cicvárek
- Ali Al Mejamai
- Zdeněk Sofer (ORCID: https://orcid.org/0000-0002-1391-4448)
- Kenji Watanabe (ORCID: https://orcid.org/0000-0003-3701-8119)
- Takashi Taniguchi (ORCID: https://orcid.org/0000-0002-1467-3105)
Institutions
- Chulalongkorn University (TH)
- National University of Singapore (SG)
- National Institute for Materials Science (JP)
- École Polytechnique Fédérale de Lausanne (CH)
- University of Chemistry and Technology, Prague (CZ)
Publication Details
- Journal
- Nature Communications
- Published
- 2026-06-08
- DOI
- https://doi.org/10.1038/s41467-026-74097-7
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Research Foundation Singapore