Bias‐Voltage Induced Transformation From Capacitive‐Coupled to Purely Resistive Switching Behavior in Ag/PVA‐Graphene Oxide/FTO Devices

We synthesized polyvinyl alcohol‐graphene oxide (PVA‐GO) based composite thin films and fabricated Ag/PVA‐GO/FTO devices. We observed a transformation from the capacitive‐coupled to purely resistive switching with an increase in applied voltage and higher GO concentration. We further investigated the nonvolatile, forming‐free resistive switching characteristics of Ag/PVA‐GO/FTO devices. The Ag/PVA‐GO‐0.2 wt%/ FTO device exhibited superior bipolar resistive switching with a V SET (Set Voltage) of ∼ 1.72 V, a V RESET (Reset Voltage) ∼ 1.83 V and a switching ratio of ∼ 10 3 . This device demonstrated two clearly distinct states at read voltage of 0.1 V in both endurance and retention tests. It successfully switched for 2.5 × 10 3 cycles and maintained its state for 4.02 × 10 3 seconds without any noticeable degradation. Furthermore, the charge‐flux linkage characteristic revealed a double‐valued function, where the time domain‐charge presented an asymmetric pattern, while the time domain‐flux displayed a symmetric pattern. The electrical conduction mechanism and resistive switching behavior were explained with suitable models.