Efficient Spin–Orbit Torque Switching via Spin‐Vorticity Coupling Effect in Light‐Metal/Ferromagnetic‐Metal Bilayers

ABSTRACT Developing highly efficient spin–orbit torques based on light metal materials is crucial for achieving low‐power and cost‐effective spintronic devices. By utilizing longitudinal second‐harmonic resistance as a sensitive probe, here we report an efficient field‐free in‐plane magnetization switching enabled by the spin‐vorticity coupling effect in PtCo/Cu bilayer structures. Compared to conventional heavy‐metal Pt‐based systems, the critical switching electric field is reduced by 79% (with a power consumption reduction of approximately 46%) through increasing the Cu layer thickness. This reduction is attributed to the enhanced mobility transition within the composition gradient region at the interface. Moreover, we establish that the critical switching electric field exhibits an inverse‐square dependence on Cu conductivity, consistent with the behavior of SVC conductivity. Our research findings highlight the potential of highly conductive light metals in developing low‐power, high‐efficiency spintronic devices.

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Publication Details

Journal
Advanced Functional Materials
Published
2026-05-31
DOI
https://doi.org/10.1002/adfm.76194
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
0.00

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article

Efficient Spin–Orbit Torque Switching via Spin‐Vorticity Coupling Effect in Light‐Metal/Ferromagnetic‐Metal Bilayers

Qikun Huang, Cheng Tan, Xiang Han, Yanan Shi et al.
Advanced Functional Materials
Magnetic properties of thin films
article

Efficient Spin–Orbit Torque Switching via Spin‐Vorticity Coupling Effect in Light‐Metal/Ferromagnetic‐Metal Bilayers

Qikun Huang, Cheng Tan, Xiang Han, Yanan Shi, 益龙 温, Shishen Yan, Qiang Cao, Yufeng Tian, Zhen Han, Li Cai
article en

Abstract

ABSTRACT Developing highly efficient spin–orbit torques based on light metal materials is crucial for achieving low‐power and cost‐effective spintronic devices. By utilizing longitudinal second‐harmonic resistance as a sensitive probe, here we report an efficient field‐free in‐plane magnetization switching enabled by the spin‐vorticity coupling effect in PtCo/Cu bilayer structures. Compared to conventional heavy‐metal Pt‐based systems, the critical switching electric field is reduced by 79% (with a power consumption reduction of approximately 46%) through increasing the Cu layer thickness. This reduction is attributed to the enhanced mobility transition within the composition gradient region at the interface. Moreover, we establish that the critical switching electric field exhibits an inverse‐square dependence on Cu conductivity, consistent with the behavior of SVC conductivity. Our research findings highlight the potential of highly conductive light metals in developing low‐power, high‐efficiency spintronic devices.

Advanced Functional Materials
Shandong University (CN), University of Jinan (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 6%
Magnetic properties of thin films
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