Design of a Dual‐Band Reconfigurable Doherty Power Amplifier Based on Dual‐Mode and Dual‐State Optimization

ABSTRACT This paper presents a reconfigurable dual‐band Doherty power amplifier (DPA) that uses a dual‐mode and dual‐state optimization method to meet the requirements of different operating frequency bands. First, load‐pull simulations are performed for both frequency bands in saturation and back‐off power states. Then, the on/off states of PIN diodes are switched to change the carrier output matching network (OMN) and the phase of the DPA. When the PIN diodes are off, the DPA operates in Mode 1 (2.6–2.8 GHz), while it operates in Mode 2 (3.4–3.7 GHz) when the PIN diodes are on. To ensure high efficiency in different modes, the carrier OMN is optimized using an adaptive particle swarm optimization algorithm by targeting a dual‐mode and dual‐state impedance objective function, meeting the impedance requirements for both saturation and back‐off power states under Mode 1 and Mode 2. For validation, a dual‐band reconfigurable DPA operating at 2.6–2.8 GHz and 3.4–3.7 GHz is designed and fabricated. Measurement results show that for Mode 1 and Mode 2, the saturated efficiency exceeds 52.7%, the 6 dB back‐off efficiency exceeds 42.5%, and the saturated power exceeds 43 dBm.

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Publication Details

Journal
Microwave and Optical Technology Letters
Published
2026-05-28
DOI
https://doi.org/10.1002/mop.70644
Primary Topic
Advanced Power Amplifier Design
Type
article
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article

Design of a Dual‐Band Reconfigurable Doherty Power Amplifier Based on Dual‐Mode and Dual‐State Optimization

Wence Zhang, Zhongpeng Ni, Xiao-Wei Zhu, Wa Kong et al.
Microwave and Optical Technology Letters
Advanced Power Amplifier Design
article

Design of a Dual‐Band Reconfigurable Doherty Power Amplifier Based on Dual‐Mode and Dual‐State Optimization

Wence Zhang, Zhongpeng Ni, Xiao-Wei Zhu, Wa Kong, Yuxuan Sun, Jing Xia, Heng Zhang, Chao Yu
article en

Abstract

ABSTRACT This paper presents a reconfigurable dual‐band Doherty power amplifier (DPA) that uses a dual‐mode and dual‐state optimization method to meet the requirements of different operating frequency bands. First, load‐pull simulations are performed for both frequency bands in saturation and back‐off power states. Then, the on/off states of PIN diodes are switched to change the carrier output matching network (OMN) and the phase of the DPA. When the PIN diodes are off, the DPA operates in Mode 1 (2.6–2.8 GHz), while it operates in Mode 2 (3.4–3.7 GHz) when the PIN diodes are on. To ensure high efficiency in different modes, the carrier OMN is optimized using an adaptive particle swarm optimization algorithm by targeting a dual‐mode and dual‐state impedance objective function, meeting the impedance requirements for both saturation and back‐off power states under Mode 1 and Mode 2. For validation, a dual‐band reconfigurable DPA operating at 2.6–2.8 GHz and 3.4–3.7 GHz is designed and fabricated. Measurement results show that for Mode 1 and Mode 2, the saturated efficiency exceeds 52.7%, the 6 dB back‐off efficiency exceeds 42.5%, and the saturated power exceeds 43 dBm.

Microwave and Optical Technology LettersVol. 68(6)
Jiangsu University (CN), Southeast University (CN)
Affordable and clean energy
Openalex Percentile: Top 9%
Advanced Power Amplifier Design
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