Logic Functionality and Circuit Design of In ₂ Se ₃ ‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In 2 Se 3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior. Here, we present α‐In 2 Se 3 ‐based ferroelectric semiconductor field‐effect transistors (FeS‐FETs) with a split‐gate architecture that enables multifunctional logic operations. Operating in the high equivalent oxide thickness (EOT) regime, the devices exhibit a clockwise transfer hysteresis with a wide memory window and an on/off ratio above 10 4 . The split‐gate design enables independent control over channel segments, allowing implementation of volatile NAND logic and reconfigurable Fe‐NAND/Fe‐NOR operations. In addition, multilevel conductance states and programmable threshold‐voltage shifts are demonstrated, further extending the device functionality toward multi‐valued and analog computing. Circuit simulations using a FeS‐FET equivalent model show that two devices are connected in parallel, and all elementary Boolean logic functions can be achieved. Notably, the programmed states retain for ∼10 2 s, a balanced retention window ideally suited for applications in security‐focused “zero‐trust” environments where temporary data storage and self‐erasure are desired.