Carbon Dot-Assisted Hydrothermal Synthesis of Copper Doped Tin Disulfide Nanosheets for Optoelectronic Applications

Tin disulfide (SnS2) has attracted extensive research attention due to its superior properties originating from its unique crystalline structure. However, its practical applications are greatly restricted by difficult morphology regulation and insufficient photoresponse capability. Herein, we successfully synthesized copper and carbon co-doped SnS2 (Cu-C-SnS2) nanosheets via a carbon dot-assisted hydrothermal method. The morphology, crystal structure and chemical composition of the obtained samples were characterized by FE-SEM, XRD and XPS. The experimental results reveal that the synthesized Cu-C-SnS2 presents nanosheet morphology with a bandgap of approximately 2.445 eV. Moreover, carbon dots and copper doping can effectively regulate the morphology of SnS2, which provides a reliable strategy for the controllable synthesis of SnS2 nanosheets. Meanwhile, the photoelectric device based on the as-fabricated Cu-C-SnS2 nanosheets were successfully fabricated, and exhibited favorable photoelectric response under 405 nm light irradiation.

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Publication Details

Journal
Materials
Published
2026-05-27
DOI
https://doi.org/10.3390/ma19112275
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Carbon Dot-Assisted Hydrothermal Synthesis of Copper Doped Tin Disulfide Nanosheets for Optoelectronic Applications

Yanjie Su, Zhenjie Tang, Huijuan Geng, Mengya Wu et al.
Materials
Chalcogenide Semiconductor Thin Films
article

Carbon Dot-Assisted Hydrothermal Synthesis of Copper Doped Tin Disulfide Nanosheets for Optoelectronic Applications

Yanjie Su, Zhenjie Tang, Huijuan Geng, Mengya Wu, Shuowei Liu, Jiang Zhao, Xiwei Zhang
article en

Abstract

Tin disulfide (SnS2) has attracted extensive research attention due to its superior properties originating from its unique crystalline structure. However, its practical applications are greatly restricted by difficult morphology regulation and insufficient photoresponse capability. Herein, we successfully synthesized copper and carbon co-doped SnS2 (Cu-C-SnS2) nanosheets via a carbon dot-assisted hydrothermal method. The morphology, crystal structure and chemical composition of the obtained samples were characterized by FE-SEM, XRD and XPS. The experimental results reveal that the synthesized Cu-C-SnS2 presents nanosheet morphology with a bandgap of approximately 2.445 eV. Moreover, carbon dots and copper doping can effectively regulate the morphology of SnS2, which provides a reliable strategy for the controllable synthesis of SnS2 nanosheets. Meanwhile, the photoelectric device based on the as-fabricated Cu-C-SnS2 nanosheets were successfully fabricated, and exhibited favorable photoelectric response under 405 nm light irradiation.

MaterialsVol. 19(11)
Shanghai Jiao Tong University (CN), Nanjing University of Posts and Telecommunications (CN), Anyang Normal University (CN)
Openalex Percentile: Top 9%
Chalcogenide Semiconductor Thin Films
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