Single-Material Magnetoelectric Coupling in Transition Metal-Doped Hafnia-Based Ferroelectric Thin Films

Magnetoelectric (ME) coupling in CMOS-compatible oxides would enable scalable, ultralow-power spintronic, neuromorphic and sensing devices. Here we report room-temperature ME coupling in transition-metal-doped Hf0.3Zr0.7O2 (HZO) thin films. Structural analyses confirm a chemically homogeneous HZO matrix in which distinct polymorphs coexist, with uniform incorporation of the transition metal ions. The resulting films exhibit concurrently ferroelectricity and magnetism at room temperature, yielding a substantial magnetoelectric coupling, as corroborated by both macroscopic electrical measurements and microscopic piezoresponse force microscopy. This coupling is highly anisotropic, showing a positive response to in-plane magnetic fields and a weak negative response to out-of-plane fields, which can be explained by an interplay between positive magnetostriction and the unique negative piezoelectric coefficient of HZO. Our work establishes transition metal-doped HZO as a promising platform for single-material magnetoelectricity and opens a pathway for integrating multifunctional ME elements into silicon-compatible technologies.

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Publication Details

Journal
Nano Letters
Published
2026-05-27
DOI
https://doi.org/10.1021/acs.nanolett.6c01119
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Single-Material Magnetoelectric Coupling in Transition Metal-Doped Hafnia-Based Ferroelectric Thin Films

Peizhen Hong, Shuai Ning, Miao Meng, Houlin Zhou et al.
Nano Letters
Ferroelectric and Negative Capacitance Devices
article

Single-Material Magnetoelectric Coupling in Transition Metal-Doped Hafnia-Based Ferroelectric Thin Films

Peizhen Hong, Shuai Ning, Miao Meng, Houlin Zhou, B Zhang, Xiaolei Sun, Xiaowei Wang, Fengbo Yan, Caroline A. Ross, Feng Luo, Yue Guan, Guo Tian, Eunsoo Cho, Jingwen Hou
article en

Abstract

Magnetoelectric (ME) coupling in CMOS-compatible oxides would enable scalable, ultralow-power spintronic, neuromorphic and sensing devices. Here we report room-temperature ME coupling in transition-metal-doped Hf0.3Zr0.7O2 (HZO) thin films. Structural analyses confirm a chemically homogeneous HZO matrix in which distinct polymorphs coexist, with uniform incorporation of the transition metal ions. The resulting films exhibit concurrently ferroelectricity and magnetism at room temperature, yielding a substantial magnetoelectric coupling, as corroborated by both macroscopic electrical measurements and microscopic piezoresponse force microscopy. This coupling is highly anisotropic, showing a positive response to in-plane magnetic fields and a weak negative response to out-of-plane fields, which can be explained by an interplay between positive magnetostriction and the unique negative piezoelectric coefficient of HZO. Our work establishes transition metal-doped HZO as a promising platform for single-material magnetoelectricity and opens a pathway for integrating multifunctional ME elements into silicon-compatible technologies.

Nano Letters
South China Normal University (CN), Chinese Academy of Sciences (CN), Nankai University (CN), Suzhou Institute of Nano-tech and Nano-bionics (CN), Center for Interdisciplinary Studies (IN), Collaborative Innovation Center of Chemistry for Energy Materials (CN), South China Institute of Collaborative Innovation (CN), Optica (US), Massachusetts Institute of Technology (US)
China Association for Science and Technology, National Natural Science Foundation of China, Nankai University, National Key Research and Development Program of China, Basic and Applied Basic Research Foundation of Guangdong Province
Openalex Percentile: Top 10%
Ferroelectric and Negative Capacitance Devices
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