From Barrier-Centric Leakage to Structural Statistical Variability in Ultra-Scaled Devices (Version 2.0)

Version 2.0 of the exploratory engineering framework introducing structural statistical abstraction for leakage variability analysis in ultra-scaled semiconductor devices. This revision includes:- expanded workflow-compatible abstraction architecture,- localized conduction configuration extraction methodology,- statistical aggregation formalism,- engineering positioning for DTCO-compatible workflows,- representative calibration and variability correlation examples,- improved figure consistency and manuscript structure. The framework proposes an intermediate structural statistical descriptor layer intended to compress distributed localized transport variability into workflow-compatible engineering metrics.