A Non‐Volatile Heterogeneous Quantum Dot III‐V/Si DFB Laser With Optical Memristive Behavior

ABSTRACT In this work, we introduce a non‐volatile heterogeneous quantum dot (QD) III‐V/Al 2 O 3 /Si distributed feedback (DFB) laser exhibiting optical memristive behavior. The device operates in the O‐band (∼1300 nm) with a threshold current density of 234 A/cm 2 and a side‐mode suppression ratio exceeding 48 dB. Co‐integrated Al 2 O 3 ‐based memristors produce bipolar resistive switching, yielding non‐volatile wavelength shifts of ∼46 pm and ∼ 17 dB peak power contrast with zero static holding power. The III‐V/Al 2 O 3 /Si heterojunction memristor I – V hysteresis is also modeled. This new device enables simultaneous coherent light generation and persistent optical state storage, establishing a new class of active photonic memory for neuromorphic and reconfigurable wavelength division multiplexing (WDM) applications.