Boosting the Performance of Visible/Near-Infrared Organic Photodetectors via Hole Interface Engineering

When poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) is employed as the hole transport layer in visible/near-infrared photodetectors, the extraction and transport of holes are hindered by the accumulation of the PSS insulating phase at the interface. This accumulation results in an increase in contact resistance and creates a potential barrier for hole injection. This study introduces a self-assembled monolayer, (2-(9H-carbazol-9-yl)ethyl)phosphonic acid (2PACz), to modify PEDOT:PSS, effectively optimizing the interface of the hole transport layer. Such improvements lead to a reduction in recombination losses during charge transfer, a lower dark current, and improved energy level alignment in the device, thereby boosting the performance of visible/near-infrared photodetectors. The fabricated double hole layer photodetector exhibits a low dark current of (1.4 ± 0.6) × 10−5 A at −1 V bias and a switching ratio of up to 7.62 × 105 at 0 V bias. The device achieves a responsivity of 0.31 A/W and a high specific detection rate of 3.23 × 1012 Jones at a wavelength of 780 nm, which corresponds to the peak responsivity, showcasing enhanced detection capabilities. In comparison to a reference device based on PEDOT:PSS, the response speed, cutoff frequency, and linear dynamic range of the double hole layer device have been enhanced by 400%, 213%, and 81%, respectively, thereby better aligning with practical application requirements. This research presents a novel approach for the development of high-performance organic visible/near-infrared photodetectors.