Effect of Ga composition of a Ga–Na melt on the dislocation density in the coalescence region of GaN crystals grown by the Na-flux multi point seed technique

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Publication Details

Journal
Journal of Applied Physics
Published
2026-05-22
DOI
https://doi.org/10.1063/5.0324419
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00

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article

Effect of Ga composition of a Ga–Na melt on the dislocation density in the coalescence region of GaN crystals grown by the Na-flux multi point seed technique

M. Yoshimura, Shigeyoshi Usami, Masayuki Imanishi, Kosuke Murakami et al.
Journal of Applied Physics
GaN-based semiconductor devices and materials
article

Effect of Ga composition of a Ga–Na melt on the dislocation density in the coalescence region of GaN crystals grown by the Na-flux multi point seed technique

M. Yoshimura, Shigeyoshi Usami, Masayuki Imanishi, Kosuke Murakami, Yusuke Mori, Mihoko Maruyama, Ryotaro Sasaki
article en

Abstract

No abstract available for this paper.
Journal of Applied PhysicsVol. 139(20)
Institute for Laser Technology (JP), The University of Osaka (JP)
Ministry of the Environment, Government of Japan
Openalex Percentile: Top 7%
GaN-based semiconductor devices and materials
DOISourceOpenAlex
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