Fabrication and Resistive Switching Characteristics of Sol–Gel-derived SrBi₄Ti₄O₁₅ Memory Devices

In this study, SrBiTiO (SBT) thin films were deposited on TiN/Si substrates by the sol-gel method, forming a metal-insulator-metal (MIM)-structured resistive random access memory (RRAM) device.Subsequently, rapid thermal annealing (RTA) was employed to improve the crystallinity and repair surface defects through lattice reorganization.An aluminum (Al) top electrode was then deposited by physical vapor deposition (PVD) to complete the MIM structure.The surface morphology of the SBT insulating layer was characterized using a field-emission scanning electron microscopy (FE-SEM) system, while the current-voltage (I-V) characteristics were measured using a precision source/measure unit (Keysight B2902A) to investigate the resistive switching behavior and underlying carrier transport mechanisms.