A 20 Hz LTPS TFT-Only 8T1C AMOLED Pixel Circuit with over Tenfold Leakage Current Reduction by Source–Drain Voltage Control

Low-refresh-rate driving is an effective way to reduce the power consumption of active-matrix organic light-emitting diode (AMOLED) displays. However, in conventional low-temperature polycrystalline silicon (LTPS) thin-film transistor (TFT) pixel circuits, leakage current through switching TFTs can disturb the stored gate voltage of the driving TFT during the long emission period. This causes the time-dependent variation in driving current and visible flicker. In this study, a novel pixel circuit for leakage suppression in low-refresh-rate driving is presented. Bias aging was first applied to reduce the leakage current of the LTPS TFT, and a device model was then built from the characteristics measured at 60 °C. Based on this model, the leakage-induced instability of a conventional 7T1C pixel circuit was analyzed. To suppress this effect, a new 8T1C pixel circuit was proposed. The key idea is to reduce the source–drain voltage of the leakage-sensitive switching TFT during the emission period by raising the initial line potential to a level close to the storage node potential. Simulation results show that the proposed circuit greatly reduces the time-dependent variation in both the driving TFT gate voltage and the driving current compared with the conventional 7T1C circuit. Perceptual evaluation based on human visual sensitivity also confirms stable low-refresh-rate operation down to 20 Hz over the practical gray range. These results show that the proposed circuit is an effective solution for moderate low-refresh-rate operation without relying on low-temperature polycrystalline silicon and oxide (LTPO) technology.