Stacking-Order-Dependent Electronic Properties of MoTe2/WSe2 Moire Bilayers

Abstract Transition metal dichalcogenide (TMD) moiré bilayers have realized a wide range of strongly correlated and topological phenomena. The physics in these materials is often sensitive to the interlayer stacking order. Polarization-resolved optical second harmonic generation (SHG) is the most used technique for stacking order characterization but unverified for most heterobilayers. Here we calibrate the optical SHG for angle-aligned MoTe2/WSe2 bilayers by the scanning transmission electron microscopy (STEM). We directly compare the transport and magnetic properties and the electronic phase diagram for two distinct stacking orders. With the calibrated stacking order assignment, we clarify the interpretation of earlier results, including the nature of the Chern insulator, mechanism of an electric-field-tuned metal–insulator transition at half band filling, and the Kondo lattice physics. Our work provides a consistent picture of the relation between the stacking order and the electronic properties of MoTe2/WSe2 moiré bilayers.

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Publication Details

Journal
Nano Letters
Published
2026-10-26
DOI
https://doi.org/10.1021/acs.nanolett.6c02425
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Stacking-Order-Dependent Electronic Properties of MoTe2/WSe2 Moire Bilayers

Ariana Ray, Kin Fai Mak, Chia‐Hao Lee, Jekwan Lee et al.
1 links
Nano Letters
2D Materials and Applications
article

Stacking-Order-Dependent Electronic Properties of MoTe2/WSe2 Moire Bilayers

Ariana Ray, Kin Fai Mak, Chia‐Hao Lee, Jekwan Lee, Zhengchao Xia, Jie Shan, Yu‐Tsun Shao, Yihang Zeng, Yiyu Xia, Bowen Shen, Takashi Taniguchi, Yichi Zhang, Zui Tao, Wenjin Zhao, Tingxin Li, Zhongdong Han, Shengwei Jiang, Eegene Clara Chung, David Muller, Kenji Watanabe
article en

Abstract

Abstract Transition metal dichalcogenide (TMD) moiré bilayers have realized a wide range of strongly correlated and topological phenomena. The physics in these materials is often sensitive to the interlayer stacking order. Polarization-resolved optical second harmonic generation (SHG) is the most used technique for stacking order characterization but unverified for most heterobilayers. Here we calibrate the optical SHG for angle-aligned MoTe2/WSe2 bilayers by the scanning transmission electron microscopy (STEM). We directly compare the transport and magnetic properties and the electronic phase diagram for two distinct stacking orders. With the calibrated stacking order assignment, we clarify the interpretation of earlier results, including the nature of the Chern insulator, mechanism of an electric-field-tuned metal–insulator transition at half band filling, and the Kondo lattice physics. Our work provides a consistent picture of the relation between the stacking order and the electronic properties of MoTe2/WSe2 moiré bilayers.

Nano Letters
National Institute for Materials Science (JP), Cornell University (US), Max Planck Institute for the Structure and Dynamics of Matter (DE)
National Science Foundation, Gordon and Betty Moore Foundation, Ministry of Education, Culture, Sports, Science and Technology, Cornell Center for Materials Research, Division of Materials Research, Core Research for Evolutional Science and Technology, Air Force Office of Scientific Research, Eric and Wendy Schmidt
Openalex Percentile: Top 77%
2D Materials and Applications
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