A 20–43 GHz High-Dynamic-Range Amplifier with Current-Reused and Vertically Stacked Topology in GaAs Process

This paper presents a current-reused vertically stacked (CRVS) topology for a high-dynamic-range amplifier (HDRA) implemented in a 0.1 μm GaAs pHEMT process, targeting wideband millimeter-wave (mm-wave) receiver front-ends. The proposed design breaks the inherent trade-off between noise figure (NF), linearity, and bandwidth, achieving simultaneous enhancement of transconductance efficiency, Miller effect suppression, and wideband matching. The fabricated prototype operates over a continuous 20–43 GHz bandwidth (covering K- and Ka-bands), demonstrating state-of-the-art performance: a flat gain of 24 ± 0.6 dB, a minimum NF of 2.2 dB, a maximum output 1 dB compression point (OP1dB) of 15.8 dBm and a low power consumption of 5 V/65 mA, with both input and output return losses better than −10 dB across the entire band. The results validate the effectiveness of the CRVS topology and highlight the competitiveness of GaAs pHEMT technology for high-performance wideband mm-wave front-ends, making the design suitable for applications including 5G/6G communication, satellite systems, and mm-wave test equipment.