Fabrication of aluminium modified Bi2O3 thin film as a transparent conductive oxide for optoelectronic applications

Bismuth oxide (Bi2O3) is considered the best oxygen ion conductor due to its crystal structure (fluorite type) and a high percentage of oxygen vacancies up to 25%. The possibility of obtaining Bi2O3 at low temperatures is of great interest. In this study, the first aluminium-modified bismuth oxide (Al-Bi2O3) thin films as a potential transparent conductive oxide (TCO) were electrochemically deposited in a potential window of -1.5 V and + 1.8 V at room temperature onto a fluorine doped tin oxide (FTO) substrate. The electrodeposition of Al-Bi2O3 film was confirmed by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), profilometry and Fourier transform infrared (FTIR) spectroscopy. The electrodeposition of Al-Bi2O3 films followed by heat treatment at 400 °C for 30 min showed the successful formation defect-free transparent films in a relatively simple methodology. The XRD analysis revealed the poly-crystalline nature of the cubic phase of Bi2O3 along with the tetragonal phase of Al2O3 confirming the successful formation of Al-Bi2O3 films. While cyclic voltammetry (CV) was used to study the electrochemical behaviour and charge transfer kinetics during the formation of Al-Bi2O3 films, the ultraviolet-visible (UV-Vis) spectroscopy was used to analyse optical properties and direct band gap of formed Al-Bi2O3 films. The resistivity measurements showed bulk resistivity value of 1.04 × 10− 4 Ω cm suggesting mixed ionic–electronic conduction behaviour. Although Bi₂O₃ is known for high oxygen-ion conductivity at elevated temperatures, the measured room-temperature resistivity and linear I–V characteristics indicate that electronic conduction dominates under the present measurement conditions. Thus, this study demonstrates a simple methodology to fabricate Al-Bi2O3 thin films for next-generation TCOs, warranting further exploration and potential integration into advanced electronic and energy applications.

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Publication Details

Journal
Discover Surfaces
Published
2026-05-19
DOI
https://doi.org/10.1007/s44507-026-00003-9
Primary Topic
ZnO doping and properties
Type
article
Field-Weighted Citation Impact
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article

Fabrication of aluminium modified Bi2O3 thin film as a transparent conductive oxide for optoelectronic applications

Discover Surfaces
ZnO doping and properties
article

Fabrication of aluminium modified Bi2O3 thin film as a transparent conductive oxide for optoelectronic applications

article en

Abstract

Bismuth oxide (Bi2O3) is considered the best oxygen ion conductor due to its crystal structure (fluorite type) and a high percentage of oxygen vacancies up to 25%. The possibility of obtaining Bi2O3 at low temperatures is of great interest. In this study, the first aluminium-modified bismuth oxide (Al-Bi2O3) thin films as a potential transparent conductive oxide (TCO) were electrochemically deposited in a potential window of -1.5 V and + 1.8 V at room temperature onto a fluorine doped tin oxide (FTO) substrate. The electrodeposition of Al-Bi2O3 film was confirmed by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), profilometry and Fourier transform infrared (FTIR) spectroscopy. The electrodeposition of Al-Bi2O3 films followed by heat treatment at 400 °C for 30 min showed the successful formation defect-free transparent films in a relatively simple methodology. The XRD analysis revealed the poly-crystalline nature of the cubic phase of Bi2O3 along with the tetragonal phase of Al2O3 confirming the successful formation of Al-Bi2O3 films. While cyclic voltammetry (CV) was used to study the electrochemical behaviour and charge transfer kinetics during the formation of Al-Bi2O3 films, the ultraviolet-visible (UV-Vis) spectroscopy was used to analyse optical properties and direct band gap of formed Al-Bi2O3 films. The resistivity measurements showed bulk resistivity value of 1.04 × 10− 4 Ω cm suggesting mixed ionic–electronic conduction behaviour. Although Bi₂O₃ is known for high oxygen-ion conductivity at elevated temperatures, the measured room-temperature resistivity and linear I–V characteristics indicate that electronic conduction dominates under the present measurement conditions. Thus, this study demonstrates a simple methodology to fabricate Al-Bi2O3 thin films for next-generation TCOs, warranting further exploration and potential integration into advanced electronic and energy applications.

Discover SurfacesVol. 1(1)
SRM Institute of Science and Technology (IN), Karpagam Academy of Higher Education (IN)
Affordable and clean energy
Openalex Percentile: Top 11%
ZnO doping and properties
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