All‐Inorganic Halide Perovskites/Wide‐Bandgap Semiconductors Heterojunctions for Self‐Powered Ultraviolet Photodetectors

ABSTRACT All‐inorganic halide perovskites have emerged as promising materials for high‐performance UV photodetectors due to their unique optoelectronic properties. This review provides a comprehensive overview of the recent progress in all‐inorganic halide perovskites and their heterojunctions with wide‐bandgap semiconductors, with a particular focus on Type‐II heterojunction engineering. We first introduce the common wide‐bandgap semiconductors used in perovskite devices, including GaN, ZnO, TiO 2 , SnO 2 , Ga 2 O 3 , MoO x, and NiO. We then discuss the progress of Pb‐based and lead‐free halide perovskites in optoelectronic devices and their fabrication, performance, stability, and applications in heterojunction self‐powered UV photodetectors. The Type‐II heterojunction is highlighted as a key strategy to enhance charge separation and transfer, thereby improving device performance. Finally, we summarize the current achievements and challenges and provide an outlook for future research directions. This review aims to provide valuable insights for researchers working on the development of high‐performance UV photodetectors based on all‐inorganic halide perovskite/semiconductor heterojunctions.