DMAPbI <sub>3</sub> ‐Enabled Synthesis of Stable CsPbI <sub>3</sub> Nanocrystals for Light‐Emitting Diodes With 27.5% External Quantum Efficiency

ABSTRACT The synthesis of perovskite nanocrystals for light‐emitting diodes typically employs poorly controlled ion‐mediated precipitation processes, suffering from low photoluminescence quantum yield (PLQY), inhomogeneous morphology, and poor stability. Herein, by adjusting the nucleation method with a new type of precursor, namely “DMAPbI 3 ”, high‐quality and low‐defect‐density perovskite CsPbI 3 nanocrystals were successfully synthesized, with PLQY of 93% emitting at 659 nm. Particularly, the CsPbI 3 nanocrystals exhibit enhanced environmental stability, maintaining ∼70% of their initial photoluminescence intensity after 6 h of UV irradiation exposure or 100°C aging. Utilized as the luminescent layer, the fabricated perovskite LED (PeLED) device shows a peak EQE of 27.5%, representing an almost two‐fold enhancement compared to 14.7% for the control PeLED device. This simple and efficient approach is well‐suited for large‐scale production and practical applications.

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Publication Details

Journal
Advanced Optical Materials
Published
2026-05-18
DOI
https://doi.org/10.1002/adom.71300
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
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article

DMAPbI 3 ‐Enabled Synthesis of Stable CsPbI 3 Nanocrystals for Light‐Emitting Diodes With 27.5% External Quantum Efficiency

Chao Tian, Chaoyu Xiang, S K Wang, Wenyuan Zhou et al.
Advanced Optical Materials
Perovskite Materials and Applications
article

DMAPbI 3 ‐Enabled Synthesis of Stable CsPbI 3 Nanocrystals for Light‐Emitting Diodes With 27.5% External Quantum Efficiency

Chao Tian, Chaoyu Xiang, S K Wang, Wenyuan Zhou, C R Yang, Naiwei Liu, Guohao Bu, Jun Pan
article en

Abstract

ABSTRACT The synthesis of perovskite nanocrystals for light‐emitting diodes typically employs poorly controlled ion‐mediated precipitation processes, suffering from low photoluminescence quantum yield (PLQY), inhomogeneous morphology, and poor stability. Herein, by adjusting the nucleation method with a new type of precursor, namely “DMAPbI 3 ”, high‐quality and low‐defect‐density perovskite CsPbI 3 nanocrystals were successfully synthesized, with PLQY of 93% emitting at 659 nm. Particularly, the CsPbI 3 nanocrystals exhibit enhanced environmental stability, maintaining ∼70% of their initial photoluminescence intensity after 6 h of UV irradiation exposure or 100°C aging. Utilized as the luminescent layer, the fabricated perovskite LED (PeLED) device shows a peak EQE of 27.5%, representing an almost two‐fold enhancement compared to 14.7% for the control PeLED device. This simple and efficient approach is well‐suited for large‐scale production and practical applications.

Advanced Optical Materials
Zhejiang University of Science and Technology (CN), BOE Technology Group (China) (CN), Advanced Materials and Devices (United States) (US), Cathay Photonics (China) (CN), Ningbo Institute of Industrial Technology (CN)
National Natural Science Foundation of China, Natural Science Foundation of Ningbo, National Key Research and Development Program of China
Openalex Percentile: Top 8%
Perovskite Materials and Applications
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