Vibrational properties of Cu2Zn1−xCdxGeS4 solid solutions: Raman analysis and effect of thermal annealing
In this study, the Raman spectra of Cu2Zn1−xCdxGeS4 solid solutions were measured and investigated. The spectra of non-annealed samples showed the presence of three dominant bands located at around 351–359, 258, and 493 cm−1. In the case of annealed samples, Raman analysis revealed a wurtz-stannite type structure for the Cu2ZnGeS4 sample, having the most intense peak located at around 360 cm−1. For the Cu2CdGeS4 sample, the analysis allowed detection of the main peak near 358 cm−1. Additionally, a linear model to relate the change of Cd/(Zn + Cd) ratio to the Raman shift of the second intense peak was proposed.
Authors
- Z. Sekkat
- M. Guc
- V. BATIR
- S. Aazou (ORCID: https://orcid.org/0000-0002-0469-0390)
- L. Dermenji (ORCID: https://orcid.org/0000-0003-4960-1619)
- E. Arushanov (ORCID: https://orcid.org/0000-0002-5859-4943)
- N. Curmei (ORCID: https://orcid.org/0009-0006-7001-3298)
Institutions
- Academy of Sciences of Moldova (MD)
- Mohammed V University (MA)
- Moroccan Foundation for Advanced Science, Innovation and Research (MA)
- Institute of Applied Physics (MD)
- Institut de Recerca en Energia de Catalunya (ES)
- Université Mohammed VI Polytechnique (MA)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2026-05-18
- DOI
- https://doi.org/10.1063/5.0325060
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Agenția Națională pentru Cercetare și Dezvoltare
- Ministerio de Ciencia e Innovación
- Ministerul Educației, Culturii și Cercetării
- H2020 Marie Skłodowska-Curie Actions