Measures to Improve Wide-Bandgap Cu(In,Ga)Se2 Solar Cells by Industry-Relevant In-Line Co-Evaporation

Chalcopyrite-based thin-film solar cells have great potential for various applications, such as top or bottom cells in tandem devices, in addition to their use as standard single-junction modules due to their tuneable bandgap energy. A bandgap energy Eg > 1.5 eV should be targeted to realize a wide-bandgap top cell, e.g., by increasing the [Ga]/([Ga] + [In]) (GGI) ratio in Cu(In,Ga)Se2 (CIGS) cells to the range of 0.7–1. A second approach is targeting the second theoretical efficiency maximum at a little lower Eg = 1.34 eV with a GGI around 0.6 for high-efficiency single-junction applications with reduced electrical losses. An industry-relevant (Ag,Cu)(In,Ga)Se2 (ACIGS) co-evaporation process for wide-bandgap cells fabricated with GGI ratios above 0.6, with moderate [Ag]/([Ag] + [Cu]) (AAC) ratios < 0.1 and in-line RbF-PDT, was established on molybdenum-coated soda-lime glass substrates. Both measures, Ag alloying and RbF-PDT, can increase power conversion efficiency (PCE) mainly due to improved open-circuit voltage (VOC). In addition, Ag addition can increase fill factor (FF), leading to an increase in the PCE for cells with GGI > 0.6 compared to Ag-free reference cells. (Zn,Mg)O, either with a [Mg]/([Mg] + [Zn]) ratio of 0.15 or 0.25, is a good option as high-resistive layer replacing the commonly used i-ZnO in combination with a CdS buffer. Our best ACIGS wide-bandgap solar cells with RbF-PDT and Zn0.85Mg0.15O (without anti-reflective coating (ARC)) from various experimental campaigns show a PCE of 12.7% (Eg = 1.50 eV), and with a slightly reduced Eg of 1.45 eV a PCE of 15.5%, with VOC of 933 mV (VOC deficit of 517 mV), and a good FF of 73.2%. In the case when the bandgap is significantly lowered to 1.34 eV (GGI = 0.61), to the second theoretical efficiency maximum, we achieved a PCE of 18.2% with ARC for an Ag-free CIGS cell with RbF-PDT. For this cell with a CdS/i-ZnO buffer system the VOC deficit is 480 mV, and the FF is 78.1%.

Authors

Institutions

Publication Details

Journal
Solar
Published
2026-05-18
DOI
https://doi.org/10.3390/solar6030027
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.00

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Measures to Improve Wide-Bandgap Cu(In,Ga)Se2 Solar Cells by Industry-Relevant In-Line Co-Evaporation

Dimitrios Hariskos, Rico Gutzler, Wolfram Witte, Stefan Paetel
Solar
Chalcogenide Semiconductor Thin Films
article

Measures to Improve Wide-Bandgap Cu(In,Ga)Se2 Solar Cells by Industry-Relevant In-Line Co-Evaporation

Dimitrios Hariskos, Rico Gutzler, Wolfram Witte, Stefan Paetel
article en

Abstract

Chalcopyrite-based thin-film solar cells have great potential for various applications, such as top or bottom cells in tandem devices, in addition to their use as standard single-junction modules due to their tuneable bandgap energy. A bandgap energy Eg > 1.5 eV should be targeted to realize a wide-bandgap top cell, e.g., by increasing the [Ga]/([Ga] + [In]) (GGI) ratio in Cu(In,Ga)Se2 (CIGS) cells to the range of 0.7–1. A second approach is targeting the second theoretical efficiency maximum at a little lower Eg = 1.34 eV with a GGI around 0.6 for high-efficiency single-junction applications with reduced electrical losses. An industry-relevant (Ag,Cu)(In,Ga)Se2 (ACIGS) co-evaporation process for wide-bandgap cells fabricated with GGI ratios above 0.6, with moderate [Ag]/([Ag] + [Cu]) (AAC) ratios < 0.1 and in-line RbF-PDT, was established on molybdenum-coated soda-lime glass substrates. Both measures, Ag alloying and RbF-PDT, can increase power conversion efficiency (PCE) mainly due to improved open-circuit voltage (VOC). In addition, Ag addition can increase fill factor (FF), leading to an increase in the PCE for cells with GGI > 0.6 compared to Ag-free reference cells. (Zn,Mg)O, either with a [Mg]/([Mg] + [Zn]) ratio of 0.15 or 0.25, is a good option as high-resistive layer replacing the commonly used i-ZnO in combination with a CdS buffer. Our best ACIGS wide-bandgap solar cells with RbF-PDT and Zn0.85Mg0.15O (without anti-reflective coating (ARC)) from various experimental campaigns show a PCE of 12.7% (Eg = 1.50 eV), and with a slightly reduced Eg of 1.45 eV a PCE of 15.5%, with VOC of 933 mV (VOC deficit of 517 mV), and a good FF of 73.2%. In the case when the bandgap is significantly lowered to 1.34 eV (GGI = 0.61), to the second theoretical efficiency maximum, we achieved a PCE of 18.2% with ARC for an Ag-free CIGS cell with RbF-PDT. For this cell with a CdS/i-ZnO buffer system the VOC deficit is 480 mV, and the FF is 78.1%.

SolarVol. 6(3)
Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (DE)
European Commission
Affordable and clean energy
Openalex Percentile: Top 9%
Chalcogenide Semiconductor Thin Films
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.