TeO2-modified SiO2-B2O3-Al2O3 glasses with enhanced dielectric constant and dissipation factor for advanced semiconductor packaging applications

Recently, glass has emerged as a core substrate material for next-generation semiconductor packaging applications compared with organic substrates because of its low dielectric property, low coefficients of thermal expansion, and excellent scalability. In this study, we present new TeO2-modified alkaline-earth alumino-borosilicate glasses with enhanced dielectric and thermomechanical properties for advanced packaging applications. The effect of TeO2 content on structural, thermomechanical, and dielectric properties of the glasses was systematically investigated. FTIR and XPS studies revealed enhanced polymerization of the glass network with increasing TeO2 addition up to 2.0 mol%, as evidenced by a reduction in the Q1/Q4 ratio. By substituting TeO2 for SiO2 up to 2.0 mol%, the dielectric constant (Dk) decreased from 4.582 to 4.458 at 40 GHz, but increased to 4.537 for further increases in TeO2 (3.0 mol%). The dissipation factor (Df) also decreased from 3.93 to 3.73(⋅10−3) at 40 GHz upon TeO2 substitution. Additionally, the incorporation of TeO2 reduced the thermal expansion coefficient of the alumino-borosilicate glasses from 3.47 to 2.99(⋅10− 6/K). These findings demonstrate that the TeO2-modified alumino-borosilicate glasses are promising alternative core substrate materials for advanced semiconductor packaging, with the potential to mitigate the limitations of organic substrates at high frequencies in AI and high-performance computing applications.