Coexistence of Nonvolatile and Volatile Memory in Molybdenum Disulfide‐Polymethyl Methacrylate Polymer Nanocomposite Memory Device

A two‐terminal RRAM device based on a poly methyl‐methacrylate (PMMA) and molybdenum disulfide (MoS 2 ) polymer nanocomposite is studied in this work. The structure and bandgap of MoS 2 nanoparticles are investigated using material characterization methods, such as XRD and UV‐Vis DRS. The Silver (Ag) and fluorine‐doped tin oxide (FTO) glass are used as the top and bottom electrodes, in the fabrication of the polymer nanocomposite device. The device FTO/MoS 2 ‐PMMA/Ag exhibits both volatile and nonvolatile resistive switching, with the switching behavior primarily dependent on the voltage‐sweep polarity, according to systematic current–voltage ( I – V ) measurements. The nonvolatile resistive‐switching properties demonstrate write‐once‐read‐many (WORM) memory. The device's reliability is demonstrated through stability tests, including retention and endurance tests. I – V data analysis indicates the impact of the conduction mechanism on the nonvolatility and volatility of the device memory, thereby aiding in understanding the switching behaviour. The coexistence of volatile and nonvolatile resistive switching memory in the device is understood by modeling the I – V data using various bulk‐limited and electrode‐limited conduction mechanisms.