Interface Engineering and Substitutional Doping in In <sub>2</sub> Ge <sub>2</sub> Te <sub>6</sub> for High‐Performance 2D p‐Type FETs and CMOS Devices

= 1 V. This research presents a straightforward strategy for reducing contact barriers and enhancing performance in 2D p-type field-effect transistors (FETs) and CMOS devices.

Authors

Kairui Qu (ORCID: https://orcid.org/0000-0001-8502-1182)
Shengli Lei
Jialin Yang (ORCID: https://orcid.org/0009-0008-2213-695X)
Yongqi Dai
Yunhai Xiong
Shengli Zhang
Xiufeng Song
Xin Wang
Banqin Ruan
Jing Xu
Tingting Guo
Xiang Chen
Haibo Zeng (ORCID: https://orcid.org/0000-0002-0281-3617)
Tong Zhao
Zhiwei Zhang

Institutions

Nanjing University of Science and Technology (CN)

Publication Details

Journal: Small
Published: 2026-05-14
DOI: https://doi.org/10.1002/smll.202511040
Primary Topic: 2D Materials and Applications
Type: article
Field-Weighted Citation Impact: 0.00

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article

Interface Engineering and Substitutional Doping in In ₂ Ge ₂ Te ₆ for High‐Performance 2D p‐Type FETs and CMOS Devices

Kairui Qu, Shengli Lei, Jialin Yang, Yongqi Dai et al.

May 14, 2026

Small

2D Materials and Applications

article

Interface Engineering and Substitutional Doping in In ₂ Ge ₂ Te ₆ for High‐Performance 2D p‐Type FETs and CMOS Devices

Kairui Qu, Shengli Lei, Jialin Yang, Yongqi Dai, Yunhai Xiong, Shengli Zhang, Xiufeng Song, Xin Wang, Banqin Ruan, Jing Xu, Tingting Guo, Xiang Chen, Haibo Zeng, Tong Zhao, Zhiwei Zhang

May 14, 2026article en

Abstract

= 1 V. This research presents a straightforward strategy for reducing contact barriers and enhancing performance in 2D p-type field-effect transistors (FETs) and CMOS devices.

Small

Nanjing University of Science and Technology (CN)

Openalex Percentile: Top 9%

2D Materials and Applications

DOI Source OpenAlex

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