Application of exhaustive simulation flow for advanced performance prediction of monolithic active pixel sensors

Abstract Monolithic active pixel sensor (MAPS) developments have pushed the detection performance in various directions, especially relative to timing where nanosecond-level precision is now considered. This evolution calls for a simultaneous upgrade of the simulation tools. We have developed a simulation flow that covers steps from the signal creation in the sensitive volume to the output of the pixel digital logic that performs the time-of-arrival and time-over-threshold (ToA/ToT) measurements. This approach adds several new features to the traditional use of the TCAD - Allpix Squared duo, including: the integration of the pixel wells from the layout in order to precisely describe the pixel key characteristics such as leakage and punch-through currents and the coupling of Monte Carlo simulations (Allpix Squared) with high precision electrical simulations (SPICE). The first (Allpix Squared) for the precise description of the current induced at the collection diode and the second (SPICE) to guarantee high precision simulation of the front-end electronics using realistic signal events. Irradiation is also modeled, both from the charge propagation side (charge trapping) and from the front-end response side (high input signal discharge). We have applied this methodology to the MAPS developed in the context of the Belle II vertex detector upgrade. In this contribution, we detail the key features of the exhaustive simulation flow, present the outcome of the comparison with the TJ-Monopix2 measurements and discuss the interest of the methodology for the development of modern MAPS.

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Publication Details

Journal
Journal of Instrumentation
Published
2026-09-01
DOI
https://doi.org/10.1088/1748-0221/21/09/c09002
Primary Topic
CCD and CMOS Imaging Sensors
Type
article
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article

Application of exhaustive simulation flow for advanced performance prediction of monolithic active pixel sensors

Y. Buch, M. Schwickardi, J. Gong, D. Jeans et al.
Journal of Instrumentation
CCD and CMOS Imaging Sensors
article

Application of exhaustive simulation flow for advanced performance prediction of monolithic active pixel sensors

Y. Buch, M. Schwickardi, J. Gong, D. Jeans, I. Ripp-Baudot, A. Gallas Torreira, G.F. Benfratello, J. Mazorra de Cos, X. Gao, H. Pham, T. Higuchi, A. Kumar, L. Molina-Bueno, Y. Okazaki, C. Bespin, L. Schall, C. Marinas, A. Bevan, D. Howgill, M. Maushart, P. Stavroulakis, R. Sefri, C. Schwanda, J. Baudot, B. Pilsl, M. Rovini, G. Rizzo, P. Breugnon, Y. Peinaud, D. Auguste, M. Friedl, F. Bosi, R. Boudagga, V. Vobbilisetti, M. Babeluk, J. B. Gong, A. Himmi, T. Bergauer, E. Riceputi, L. Federici, S. Bettarini, J. Bonis, P. Pangaud, D. Xu, M. Massa, E. Sacchetti, A. Taffara, M. Winter, L. Ratti, G. Bertolone, L. Corona, L. Gaioni, C. Irmler, P. Barrillon, G. Traversi, M. Barbero, V. Re, F. Forti, J. Serrano, M. Minuti, A. Moggi, D. Fougeron, C. Finck, A. Dorokhov, G. Casarosa, A. Gabrielli, R. Russo, G. Dujany, C. Hu-Guo, L. Massaccesi, S. Mondal, S. Giroletti, M. Vogt, S. Wang, T. Kishishita, F. Bernlochner, K. Hara, K.R. Nakamura, A. Fernandez Prieto, C. Lacasta, Y. Onuki, J. Dingfelder, M. Karagounis, F. Morel, B. Schwenker, M. Bona, I. Valin, A. Frey, M. Kachel, H. Krüger
article en

Abstract

Abstract Monolithic active pixel sensor (MAPS) developments have pushed the detection performance in various directions, especially relative to timing where nanosecond-level precision is now considered. This evolution calls for a simultaneous upgrade of the simulation tools. We have developed a simulation flow that covers steps from the signal creation in the sensitive volume to the output of the pixel digital logic that performs the time-of-arrival and time-over-threshold (ToA/ToT) measurements. This approach adds several new features to the traditional use of the TCAD - Allpix Squared duo, including: the integration of the pixel wells from the layout in order to precisely describe the pixel key characteristics such as leakage and punch-through currents and the coupling of Monte Carlo simulations (Allpix Squared) with high precision electrical simulations (SPICE). The first (Allpix Squared) for the precise description of the current induced at the collection diode and the second (SPICE) to guarantee high precision simulation of the front-end electronics using realistic signal events. Irradiation is also modeled, both from the charge propagation side (charge trapping) and from the front-end response side (high input signal discharge). We have applied this methodology to the MAPS developed in the context of the Belle II vertex detector upgrade. In this contribution, we detail the key features of the exhaustive simulation flow, present the outcome of the comparison with the TJ-Monopix2 measurements and discuss the interest of the methodology for the development of modern MAPS.

Journal of InstrumentationVol. 21(09)
University of Pisa (IT), University of Bergamo (IT), Centre National de la Recherche Scientifique (FR), University of Bonn (DE), Austrian Academy of Sciences (AT), High Energy Accelerator Research Organization (JP), Dortmund University of Applied Sciences and Arts (DE), Queen Mary University of London (GB), Jilin University (CN), Universidade de Santiago de Compostela (ES), The Graduate University for Advanced Studies, SOKENDAI (JP), Aix-Marseille Université (FR), University of Pavia (IT), Université Paris-Saclay (FR), Institut Pluridisciplinaire Hubert Curien (FR), Centre de physique des particules de Marseille (FR), Instituto de Física Corpuscular (ES), Kavli Institute for the Physics and Mathematics of the Universe (JP), Laboratoire de Physique des 2 Infinis Irène Joliot-Curie (FR), Centrale Méditerranée (FR), Istituto Nazionale di Fisica Nucleare, Sezione di Pisa (IT), Université de Strasbourg (FR), University of Göttingen (DE), The University of Tokyo (JP)
Openalex Percentile: Top 64%
CCD and CMOS Imaging Sensors
DOIOpen Access PDFOpenAlex
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